Dear Kelvin, thank you for the nice explanation. I have a question about dislocation multiplication. As far as I understood, there is a critical stress for dislocation multiplication,but how about temperature? Is it possible to achieve dislocation multiplication in silicon at room temperature?
@kelvinxiemsentamu68903 жыл бұрын
Hi Namig, the lattice resistance is too high for Si. Moreover, Si can undergo phase transformation, which competes with dislocation-mediated plasticity. Thus it is difficult to have dislocation multiplication in Si at RT.