Excellent.....sir could you please make video on Active clamp forward converter operations and it's design
@sambenyaakov10 ай бұрын
There is a video in my channrl on active clamp for Flyback
@anoimo9013Ай бұрын
Nice trick. Good use and example of simulators
@sambenyaakovАй бұрын
Thanks.
@owieccyt10 ай бұрын
We just published a paper on measuring the turn-on and turn-off losses (title: calorimetric measurement methodology for comprehensive soft and hard switching loss characterisation). We can directly measure both turn-on and turn-off losses at hard and soft-switched conditions. We do all that without a current shunt or impacting the switching loop. The paper is not yet indexed but if someone is interested I can send a copy.
@sambenyaakov10 ай бұрын
Interesting. Can you send me a copy? sam.benyaakov@gmail.com
@fala-at8 ай бұрын
Could give the link to the paper ?
@sambenyaakov8 ай бұрын
OK
@aprilzhao36010 ай бұрын
Great explanation on the MOSEFT switching behavior. One question, considering the channel loss and Coss E stored as a whole during MOSFET tuning off, how does the dependency on inductor current look like? Is it still the higher the IL the less the total loss but with less correlations factors, or no change on total loss?
@sambenyaakov9 ай бұрын
Good question. The inductor current is controlling dv/dt. The higher the current the faster is the rise and the overlap.
@mehtabhussain4961Ай бұрын
@@sambenyaakovdo you mean to say that at higher currents , voltage will rise steeply, therefore overlap between falling current and rising voltage will increase therefore increasing channel loss ? On the other hand, for low inductor current, the voltage will rise slowly and therefore low losses ?
@sambenyaakovАй бұрын
@@mehtabhussain4961 Indeed
@kkh862310 ай бұрын
Hello Prof.Sam. What a wonderfu lecture.. Can you explain why the current direction of the upper Coss is like that? should be it opposite way? 9:21
@sambenyaakov10 ай бұрын
Yes, you are correct. This is an error. The arrow is in wrong direction. Thanks for pointing this. .
@m_dunn10 ай бұрын
Great explanation! Have you already done the hard on switching explanation in a half bridge, or is it to follow?
@sambenyaakov10 ай бұрын
In the making😊
@vasilisk894410 ай бұрын
Wow, thanks!
@sambenyaakov10 ай бұрын
👍🙏
@gsuberland10 ай бұрын
Would the accuracy of the simulation in this context be improved at all by switching from the Shichman-Hodges model (level 1) to an alternative model such as MOS2, EKV, or BSIM? I know the latter two are designed for submicrometer ASIC applications, and may be difficult to set up from the datasheet alone, but the improved modelling of subthreshold behaviour seems to imply that they might offer improved accuracy in the context of switching losses. I'm less familiar with MOS2 (and MOS3) but they look to be very easy to set up. Additional question: is there any non-negligible internal parasitic resistance (or another source of thermal loss, such as we see with domain wall heating in MLCCs) in the internal Coss path during switch off? If so, is that at all relevant in the hard or soft switching cases? (presumably not in hard switching, since the energy is lost into the channel anyway, and only fractionally so in soft switching due to external parasitic losses dominating the picture)
@sambenyaakov10 ай бұрын
Good questions. 1. I really don't know which model is th best. I am using models supplied by the manufacurers assuming that they chose the best MOS model. 2. Dielectric losses were documented for super junction transistors, I doubt if it is significant here. Thanks for the conversation.
@robr855410 ай бұрын
Can you show how the 6 in the denominator occurs?
@sambenyaakov10 ай бұрын
kzbin.info/www/bejne/mZuzfoWpe6ydabs
@mahitvirma10 ай бұрын
Prof in the circuit at 00:10 if the diode is conducting the voltage across the top mosfet should be clamped to +hv so i can't see how vds voltage and id current can change simultaneously Thanks
@sambenyaakov10 ай бұрын
Did you see this? kzbin.info/www/bejne/fWGQg3aIq8lsprs The voltage is controlled by the caps charging. If you don't follow, let me know.
@kundansrivastav871110 ай бұрын
Hello Prof @@sambenyaakov. I had the same question - I was also expecting HS FET's VDS to rise completely before ID starts dropping. But after I rewatched the time stamp you are referring to, I could deduce this - In the case where HS turn OFF is FAST, in that case the COSS of HS starts carrying current, which slowly charges it up (raising VDS) while channel current ID is dropping Is the understanding correct? And if so, do we mean to say that IF the HS turn OFF was SLOW, in that case we would see VDS rising fully first (and LS diode starting to conduct) before HS ID starts dropping? Thank you.
@tanmayvadhera42509 ай бұрын
But the source voltage is free to change
@sambenyaakov9 ай бұрын
@@tanmayvadhera4250 The source voltage is not " free to change". The source voltage is dictated by the external circuitry. A MOSFET is a current source not a voltage source.
@tanmayvadhera42509 ай бұрын
@@sambenyaakovDear Prof, I actually meant to say the same thing, as in the drain is tied to the supply and the source is free to change based on the load (as you mentioned) .
@tamaseduard514510 ай бұрын
👍🙏❤
@sambenyaakov10 ай бұрын
thanks
@gaynzz684110 ай бұрын
How many more "new looks" will there be? lol
@sambenyaakov10 ай бұрын
Do you have anything of substance to say about the content? Or your attention span does not extend beyond the title? lol