Lecture 37 (CHE 323) Etch, part 4

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Chris Mack

Chris Mack

Күн бұрын

Пікірлер: 6
@SaliAcid
@SaliAcid 8 жыл бұрын
Thanks for your great lectures! I'm a senior in INHA University in S.Korea majoring in Electrical Engineering. I couldn't sign up for semi-conductor classes in my school life. but I've always wanted to work in semi-conductor industry. Your lectures are so easy to understand. So, it helps me to getting basic semicon knowledge.
@JoaoCunha-wd1nj
@JoaoCunha-wd1nj Жыл бұрын
Thank you Chris, I think this is one of the best series and best explanations I faced, its amazing how simple you can explain this advanced concepts. Thank you very much!
@susmitaganguly1760
@susmitaganguly1760 5 жыл бұрын
The lectures are so good. By the meantime I got some questions: 1. Why you don't want H in the RIE process? 2. What causes etched features at one edge of the wafer to have higher etch rates? 3. What causes the overall wafer-scale etch rate variation pattern observed in wafers?
@ChrisMack
@ChrisMack 10 жыл бұрын
PDF copies of all the slides in this course are available at: www.lithoguru.com/scientist/CHE323/course.html
@Jarrod_C
@Jarrod_C 5 жыл бұрын
What about cryogenic etching?
@reemalshanbari
@reemalshanbari 4 жыл бұрын
Hello Mack - CF4 can etch Si. So, I think it is not possible to use it when you etch Sio2 on top of si. They have very low selectivity, correct me if I'm wrong. Thank you
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