Electronics Science SET Exam Solved Question Paper 2021

Electronics Science SET Exam Solved Question Paper 2021 #setexam #electronicsscience #questionpaper #questionpaperanalysis
1)A Si n-p-n bipolar transistor has the following parameters collector current Ic = 6 mA, common emitter current gain factor hFE = 120, operational temperature T = 300°K. Determine the mutual conductance of small signal transistor.
0.23 mho
0.02 mho
2.3 mho
4.33 mho
2)When an electron is thermally excited to conduction band in semiconductor, an electron is surrounded by :
(A) a very less number of occupied energy state
(B) a very less number of unoccupied energy state
(C) a large number of unoccupied energy states
3)n-channel MOSFET is preferred than p-channel MOSFET because :
(A) input impedance of n-channel is higher than the input impedance of p-channel MOSFET
(B) input impedance of p-channel is higher than the input impedance of n-channel MOSFET
(C) the electron mobility in Si is smaller than the mobility of holes
(D) the electron mobility in Si is larger than the mobility of holes
4) For a p-type material the Fermi level :
lies at the middle of Fermi region
lies near the valence band
lies near the conduction band
lies in the conduction band
5) Mobility of electrons for Silicon (intrinsic) at 300 K is :
(A) 1350 cm2 /s
(B) 3900 cm2 /s
(C) 5000 cm2 /s
(D) 8500 cm2 /s
6). Distribution of implanted impurity ions by Ion implantation method is :
(A) Parabolic
(B) Gaussian
(C) Random
7) Which of the following is correct for BJT ?
(A) Emitter injection efficiency is made close to unity by doping the emitter much higher than the base
(B) Emitter injection efficiency is made close to unity by doping the base much higher than the emitter
(C) Emitter injection efficiency can be improved by the use of larger band gap emitter than in the base
(D) Emitter injection efficiency is independent of doping profile at either base or emitter
8) Typical value of impurity concentration in a Tunnel diode is :
1 part in 1010parts
1 part in 108 parts
1 part in 106 parts
1 part in 103 parts
9) A Zener diode when used in voltage stabilization circuits is biased in :
(A) Reverse-bias region below the breakdown voltage
(B) Reverse-breakdown region
(C) Forward-biased region
(D) Forward biased constant current mode
10) . Match List I with List II and select the correct answer using the codes given below :
List I
a)Donor energy band
(b) Fermi level of p-type semiconductor at room temperature
(c) Acceptor energy band
(d) Fermi level in intrinsic semiconductor
List II
At the middle of the forbidden energy gap
Close to the conduction band
Very close to the valence band
Close to the valence band