GaN IC Roadmaps

Efficient Power Conversion (EPC) started production of its first-generation GaN-on-Si power transistors in March 2010. These early examples of 40 V - 200 V power devices had lower on-resistance for their rated voltage than the theoretical limit for the silicon MOSFET. Since then, the technology has evolved to higher power densities and more functionality, and the technology has gained widespread acceptance in the power system design community. Integrated circuits first appeared in 2014 with the monolithic half bridge, while the underlying transistor platform evolved through four additional generations of improved power density. This keynote with discuss new families of ICs as well as the additional functionality improvements in products for motor drives, DC-DC converters, and lidar systems.
Alex Lidow’s presentation on the GaN-Day at Bodo’s 2022 WBG Event.
He is CEO at Efficient Power Conversion.