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Wide BandGap semiconductor switching technology is now broadly accepted and both gallium nitride and silicon carbide solutions are to be found in many applications. As both technologies gather momentum, applications are tending to consolidate around one of the two. Power Integrations fully embraces the use of WBG semiconductor technologies and has released power switcher IC products incorporating the most appropriate primary switch technology for the task at hand. For high efficiency at high powers, GaN is the right choice, for high voltage, SiC is clearly the winner. For low power levels, classic silicon is the most appropriate switch technology in almost all circumstances. This presentation will discuss the advantages that this ‘technology-agnostic’ approach brings, enabling the most suitable technology - GaN, SiC or Si - to be chosen for any given application.
Andrew Smith’s presentation on the GaN-Day at Bodo’s 2022 WBG Event.
He is Director of Technical Outreach at Power Integrations.