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IGBT stands for insulated-gate bipolar transistor. It is a bipolar transistor with an insulated gate terminal. The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.
Thus, typical applications of IGBTs include induction cooktops.
IGBT is a voltage-controlled device, it only requires a small voltage on the Gate to maintain conduction through the device unlike BJT’s which require that the Base current is continuously supplied in a sufficient enough quantity to maintain saturation.
Also the IGBT is a unidirectional device, meaning it can only switch current in the “forward direction”, that is from Collector to Emitter unlike MOSFET’s which have bi-directional current switching capabilities (controlled in the forward direction and uncontrolled in the reverse direction).
The principal of operation and Gate drive circuits for the insulated gate bipolar transistor are very similar to that of the N-channel power MOSFET. The basic difference is that the resistance offered by the main conducting channel when current flows through the device in its “ON” state is very much smaller in the IGBT. Because of this, the current ratings are much higher when compared with an equivalent power MOSFET.
The main advantages of using the Insulated Gate Bipolar Transistor over other types of transistor devices are its high voltage capability, low ON-resistance, ease of drive, relatively fast switching speeds and combined with zero gate drive current makes it a good choice for moderate speed, high voltage applications such as in pulse-width modulated (PWM), variable speed control, switch-mode power supplies or solar powered DC-AC inverter and frequency converter applications operating in the hundreds of kilohertz range.
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