Ferroelectric tunneling junctions for beyond vonNeumann computing

By Stefan Slesazeck (NaMLab gGmbH)
Title: Ferroelectric tunneling junctions for beyond vonNeumann computing
Abstract:
The discovery of ferroelectricity in doped HfO2 that was firstly published in 2011 by Böschke et al. strongly increased the interest in ferroelectricity. The polarization reversal in ferroelectric HfO2 films can be adopted to store information in three distinct device classes. Depending on the material stack composition different devices can be constructed from the very same ferroelectric layer - ferroelectric capacitors (FeCAP), ferroelectric field effect transistors (FeFET) and ferroelectric tunnel junctions (FTJ). The electrical characteristics of these devices are strongly influenced by the whole material stack, rather than being dictated by the properties of the ferroelectric layer itself. In this talk I will focus on the design and electrical characteristics of HfO2-based FTJ bi-layer devices. Moreover, considering the application of FTJs for beyond von-Neumann architectures, I will discuss the constraints on the circuit design that arise from the specific FTJs device properties.
The INTERSECT Workshop was held in Barcelona, at UAB’s Casa Convalescència, on November 10-12 2021.
For more information about the workshop: intersect-workshop.icn2.cat/
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 814487