CB Transistor (Input Characteristics & Early Effect)

[@nehalahariya2141]

Hello sir... We have studied a major part of our syllabus from your videos... Your explanation technique is amazing... After watching your videos we could understand every word of our book. Thank you so much sir... You are a great teacher!

[@bhuvanch7797]

Yes .... exactly

[@sabihasultana8002]

due to the pandemic, not a single class was conducted by the college, moreover the govn declared no exams so when online classes started, they started teaching the next sem.. now suddenly they are conducting previous sem exam on a short term notice, do we pay fees only to give exams? where is the education? if i pass this exam its only because of this channel, may god bless you..please keep up the good work. topics which i never understood are so clear to me now..thank you.

[@taintedmeat9740]

The Early effect is often mentioned in textbooks but rarely explained...thank you sir !

[@yonathancherkos4232]

your lectures are really helping me for my electronics course,thanks dude

[@parvezakhtar1053]

No one explained i/p character so easily sir . Hats off

[@ChandravijayAgrawal]

only video over youtube which explains early effect

[@imalkavindawickramasingha4331]

Only one you found i think! there're more and this one explains it wrong

[@shivammaan4796]

@@imalkavindawickramasingha4331 hahahaha

[@anujsharma8938]

@@imalkavindawickramasingha4331 are you from Sri Lanka ???

[@VivekyadavIIITian]

nice video lecture sir Sir i am from IIIT and I attained your lecture .It helps me a lot in my examination. Thanks for the amazing teaching technique and excellent content.

[@pratibimbswain]

The only teacher who explained early effect so brilliantly. Thank you so much sir

[@rahelmeshesha]

Omg thank you so much. I seriously can't understand concepts that aren't well reasoned and this video has perfect reasoning 😍😍😍😍😍

[@adycerriteno3230]

How can depletion layer penetrate?

[@AnkitGargIndia]

Ref 7:45 to 8:07: why would emitter current increase when effective base width reduces? less base width --> less recombination --> less base current and also the equation Ie = Ib+ Ic doesn't justify increase in emitter current. Awaiting for your response, thanks in advance..

[@ahmadsunjaq5792]

I wanted to ask the same question also>>@neso_academy

[@updownftw]

Your answer lies in you question. ie= ib + ic. Here you see as you said less recombination >> more ie >> less ib, so as more ie and less ib the equation satisfies itself.

[@manohar3929]

Ankit Garg Actually emmitter current is a combination of Diffusion of electrons from emitter to base ..and diffusion of holes from base to emitter .. but the diffusion from base to emitter do not contribute for the current from emitter to reach collector ... so that is the reason why doping is reduced in base so the max contribution of emitter current is through diffusion of electron from emitter to base . if the base width itself reduced due to RB of collector junction . emitter current is increased cause it is only achieved by diffusion frm emiitter to base increased..base to emitter diffusion current decreased

[@abdullahqayyum4917]

when Ib decreases than according to the equation Ic should increase.why Ie is increasing?great confusion.

[@KirkHammer-fj2of]

even I thought increase in base width would result in more recombination, thus decrease in ie

[@021ahmadhanifmuwaffaq6]

Thank you, Sir! Your explanation is very clear. May God Bless You!

[@adamsmith2362]

6:11-depletion region of base collector junction which is reverse baised so you have shown that the depletion region penetrates more into base region but that is actually true for collector region as it is highly doped.

[@nishantgautam7627]

Wahh matlb kuch bhi 😂

[@hbedit9106]

@@nishantgautam7627 not kuch bhi. Go and read properly before commenting bullshit.

[@learnwithlearner3583]

Sir the videos are very helpful in completion of our syllabus with clear understanding...thank u sir

[@anjaliar382]

very much informative sessions...expecting a lot from u guys..

[@NehaGupta-nz4ol]

the best online lecture on trnsistr charactrstcs..

[@wiltelmoreticharwa178]

thank you sir,,,your explanation is very clear and easy to understand

[@avinashmishra7838]

At 2:38, you have said that an n-p-n transistor can be considered as two diodes connected back to back. This assumption is rarely true, for the arrangement, the p-region must be very thin and the doping concentration of p-region must be very less compared to the n-regions.

[@tanushqajoshi7821]

Awesome video! Best explanation on KZbin

[@agstechnicalsupport]

Early Effect very well explained !

[@manjunathiuppaladavar1840]

ThanQ so much sir, now we can understand many things in electronics as we saw your videos. 👌🏻😍

[@ankitabhatt3330]

thank u sir...you explain concepts so well!

[@27chinmay10]

great work sir. With learning through online lectures i couldn't understand every bit our sir taught us. But you made it out. Thanks for this great teaching. Just one thing please can u improve your W its looking like K. nothing else thank you. i cant say it in words very very thank you

[@nazimuddin9198]

It gives details concept on early effect. thanks for this one

[@Karthikreddy9041]

God gifted teacher to us❤❤❤

[@yashagrawal1663]

Only a good thing teachers can do is that they refer your channel to students

[@jatinpatro3541]

Thank u sir... I fall short of words how, helpful this was to me.

[@tahsinhasan7102]

I hope, you also add loud sound with this sweet explanation.

[@mebawubeshet6729]

hello sir 8:01 you said that the chance of recombination is low and ie increases you're right. but my question is base is connected to ground and if there is recombination there is no potential to crete the floow of current of IB . increasing the the vcb even-though it increases the width the recombination will not have that much effect

[@common4960]

Hello sir Thank you for explaining everything clearly ❤❤

[@ayantika_03]

Sir I'm from nit I can't even understand which topic our faculty is teaching in class upcoming viva exams are there and your videos are at rescue 😅 thankyou sir

[@maanassakv9916]

Ur explanation are so clear pls do on difficult subjects like electromagnetics please

[@adityachopra3759]

Very complicated concept of Early Effect. No wonder I didn't follow it in college lecture.

[@alterguy4327]

Aditya Chopra Me too

[@nageswarrao2848]

You are our God sir.Words are less for you, praisings are less for you, you are simply superb sir.Thank you sir.

[@hemanthgooty]

no words,, ,really ur great man

[@sayanbanerjee2722]

Sir thank u for being there for us.

[@muhammadhusnimuttaqin2303]

this video is better than lecture in campus :')))))))))).

[@siprabehera2955]

Pllz add video for Operational amplifiers! 🙏.......ur explanation is much preferred than any other videos

[@ramadivijasri8676]

Perfect way of explanation..clear 👏👏👏

[@w0rth_milli0ns]

You explains so good...thnx brother

[@UECAshutoshKumar]

Thank you sir ❤️

[@boliviakollasuyo]

I Appreciate very much your lecture videos!

[@PariharShreyash]

best teaching sir best

[@nameerakoser4873]

your video was quite helpful.

[@luciuspertis5672]

Awesome ..... Keep making such videos Bro

[@riyankpatel1680]

Just superb....keep it up!!!

[@poojaraval1078]

thank u so much for such a good explanation :)

[@lavanyasenthil4136]

if recombination due to early effect decreases ,then ic must increase rt because more electrons will move to collector how does ie increase?

[@ManishYadav-gx8ce]

at the end after drawing graph, you did say IE increases, but did not show that exact thing in graph, the corresponding height for IE also increases for increased VE.

[@shenoyshridhar]

thankyou very much for clearing concepts

[@crushedcornbollgaming8188]

Sir ,in early effect the depletion layer penetrates more in collector than base due to high doping and electron being pulled away more from battery in conparison to wholes but due to less width of base the effective width still significantly decrease

[@mohammedkhandwawala6758]

Nice Lecture

[@alnashraansari8484]

very helpful video sir

[@bios546]

@2:06, shouldn't input current be -Ie and output be -Ic in cb npn transistor?

[@dhirenderbisht4956]

tnxx...it really helped me a lot!!

[@parthpandey4631]

Is cutoff voltage also decreases on increasing output voltage ( as there is decrease in effective width of base)?

[@MalikSaab-g2y]

Thank uuuuu so much 😊 sir 🎉

[@freeandreliablejeeprep820]

thank you srila prabhupad , krishna , and sir

[@subhodipchatterjee9043]

your lecture very helpfull

[@ayushshaw6527]

At 8:40 , how and which side the concentration is increasing with decreasing effective area of the base, can u explain

[@samuelatogyasiotabir9655]

God bless Nesco Academy

[@ik.........9210]

Excellent ❤️

[@Amansingh-nl4ev]

Sir one correction please... Collector is lightly doped so more depletion region compared to base. Just to be digramatically correct, else concept is totally correct.

[@Pablo-ho2rg]

W.r.t to base it is more doped that is why

[@Asdun77]

Allah bless you, I hope you success in your life, thank you.

[@RahulSharma-oc2qd]

I am not from this background. But we generally look for output against changing values of Input. But here we are changing output and looking for its effect on input variables. Can someone help me in understanding it on broader level that if I have a exact physical replica of this circuit, how can I change output variable in layman terms? And second question is, when we decrease area the resistance should be more and hence less current but here less Weff is causing more current, this one I didn’t get either.

[@Akash_347]

1. NPN Emitter base juntion Forward Biased, CBJ reverse biased: i. large concentration of electrons are injected into the base region from emitter. Some of these electrons recombine with the holes in the base and the rest of the electrons travel to the collector region. ii . there is a BASE current, which is due to the flow of holes into the base region to compensate for the holes lost during the recombination. 2. when CBJ revere bias is increased: i. Depletion region penetrates more into the base region, which also means that there is less mobile charge carrier(hole) in the base compared to previous situation. ii. therefore the electrons entering from the emitter wont recombine at the base as much as the previous case, which means the electrons can flow more freely to the collector, ie there is a reduction in resistance to the current flow.

[@jutlavasantha4176]

Sir can u plz explain why the depletion region is more concentrated in base region and how does emitter current increase. Thanks in advance

[@noob-wo5ou]

The reason in concentration. Base is least doped part of the transistor when compared to Emitter or Collector. In REVERSE BIAS the LOWER the doping, Higher is the penetration of space charge region ie. higher the depletion width. Also higher doping means lesser pentration. The Weff region decreasing means lesser recombination, thus more electrons can pass to COLLECTOR region.

[@jutlavasantha4176]

thank u sir

[@gpguru7355]

Why do we take Vcb as constant for input characteristics? Why do we take current IE as constant for output characteristics?

[@umershehzad2058]

Output voltage should constant in input chrc

[@jeedula38118114]

Why Emitter current increases with increase in collector to base voltage in common base configuration of a BJT?

[@nabby0084]

because now more electrons can diffuse through base region as recombination decreases

[@rehanahmad6236]

The Early effect will have no impact on breakdown voltage across EB?@Neso

[@thewhitene9746]

The negative immobile ion concentration in base is increasing, so shouldn't the Ie (input current) decrease? Cause the electrons from emitter will be repelled by the negative ions of base.

[@sudhaman5141]

I didnt get it when recombination decreases how ie will increase

[@samishang.c4791]

because the electrons coming from emitter will have less chance for recombination on base region so that all the electron will flow to the collector and finally to source which is ie hence ie increases

[@ArunKumar-qg9hm]

@@samishang.c4791 i have one doubt...there is depletion region(barrier) in base..then how the electron can flow from emitter to the collector?

[@SherKhan-wb5wu]

@@ArunKumar-qg9hm the electron cmng from emitter is highly energetic and bcz j1 is forward biased which make the way easier to get into colletor

[@tanmaysarkar6900]

@@ArunKumar-qg9hm because the electrons that came from emitter region behave like minority charge carrier in base region and as reverse bias is favorable for minority carrier ,so the electrons can easily cross the J2 junction..

[@regale5359]

@@ArunKumar-qg9hm The collector juntion is more positve so electron will be attracted by the collector terminal and the barrier J2 will not have much impact because of low potential barrier

[@saidwali4658]

Sir I'm confused. How IE is input when it is leaving the transistor and IC is output when it is entering the transistor?

[@pranathipalli2086]

Here the case is that the conventional direction of current is from positive to negative(i.e. p to n) but the actual flow of electrons are from emitter to base

[@hashiska.5358]

in my opinion, collector current should increase as a result of reduced recombination, whereas the increase in emitter current should be attributed to the fact that concentration gradient has increased. correct me if I am wrong.

[@Pablo-ho2rg]

You are right

[@hashiska.5358]

@@Pablo-ho2rg thank you for letting me know

[@Saitama_suiii]

sir...your videos have very low sound...otherwise These helped me a lot...thanks for that...

[@worldstop1096]

Sir We know that in the region of base due to early effect ic current increase due to less recombination but the part that increase in ic is that which did not recombine so Ib is less and ie should not increase but your explanation say ie increase may you explain this??

[@abhaykondru3570]

Yes bro ur right

[@kaustuvregmi1469]

Nice video

[@jhialilatadash9771]

How IE increases with decrease in w effective plz explain me sir

[@goshikaamarnath2868]

The current emitted by the emitter is IE when IE (electrons in case of npn transistor) enter into base region recombines with holes in base region (suppose 5 holes are there in base region and 15 electrons in emitter region)so 5 electrons recombine with electrons and remaining electrons enter into collector region.so number of electrons is decreased from emitter to collector.so IE decreased. So if W effective is less.less recombination takes place .so IE increases

[@abhaykondru3570]

Sir what is the effect on input voltage actually when Vcb increases input voltage is decreasing

[@singhfitness8894]

really very good

[@mallikarjunareddy4862]

Sir why we are taking graphs between input votage and input current and output voltage why not output current? If any one know please answer

[@regale5359]

Because Ic depends on VCB.

[@AdityaGupta-uw3zh]

Respected Sir, How did depletion region move further into the base region at 5:47?

[@AdityaGupta-uw3zh]

nishant gautam haha, never got into electronics :) but thanks man! Baki ke kids ko help karega tumhara revert

[@kailasvikhe6252]

in the ouput characteristics..Ie remains constant for one curve; it is just according to the equation Ie=Ic(approx)..but during breakdown Ic increases tremendously even when Ie remains constant...where is the rest of the current coming from when Ie is constant

[@competitiveworld5744]

Sir why emitter current is input current ..? Please reply me .

[@sammyapsel1443]

Why does the I-V curve of the f.b. diode starts to exponentiially grow only after Vbe > 0.7(the voltage buil-in). We learned that it should ideally start to grow exponentially already when Vbe >0 , no?

[@steffisnow4715]

This is the case where the diode is made of silicon.The Barrier voltage of silicon is 0.7 .Hence for the diode to conduct the Biasing voltage must be greater than or equal to 0.7

[@malcolmpinto3374]

Why is it shifting towards the left ? And shouldn't that first and middle line become longer ?

[@Surya-uv3bz]

Sir what about depletion region of n-p which is in forward bias as you wrote W (eff) is region without depletion region

[@scoc44_siddhesh_waje91]

Graph of Vbe vs Ie should be start line. I don't understand why it's curve. Please explain sir

[@KirkHammer-fj2of]

I thought increase in base width would result in more recombination, thus decrease in ie

[@ananyadas2553]

how, less no. of holes are available to recombine with electrons, therefore most electrons will move to collector region, increasing both Ic and Ie as Ic = alpha(Ie)

[@shivamijardar1464]

Why we are getting the output characteristics in first quadrant. Are u taking the magnitude only( neglecting the direction of Ic and sign Vcb)

[@shivamvats413]

Depletion width of collector will be thicker than in the base region due to higher charge density in base region(smaller size). Isn't it?

[@sumantkumbar969]

I have question.let us take the input voltage as 0.7V and keep it constant.the output voltage is increased from 0V to anywhere between 0.7V will there be increase in Ie current.what I feel is,when output voltage is increased from 0V up to 0.7V the Ie current decreases. When output voltage exceeds 0.7 voltage then Ie current starts increases.please tell me the answer

[@abhirajpillai6671]

Vbe should be -ve for emitter base to be forward biased.

[@aarushimann1366]

Which is the Ebers Moll Model of BJT?

[@hamroadventuredaai]

cant we consider early effect for output characteristics. as Ic=a Ie.. and we already have shown that Ie is affected by Vcb.. so ultimately Ic a will be affected.. if so then what will be graphs nature??

[@NasirAli-wv6gi]

Early effect is observed only in common emitter configuration, you need to correct that

[@akshadaghule1904]

Nasir Ali :early effect occur in CB Configuration also

[@akshadaghule1904]

how can u increase the vcb by showing that arrow is going toward origin?(from input characteristics graph) I think it should go away from origin if u want to increase the vcb.because in CE Configuration lecture u did the same thing which i m saying i.e. value increases as we go away from origin

[@dineshs9398]

sir why Vcb move towards left side in graph?

[@Aman..Kumar..]

Sir why you have not considered the depletion region formed in the base region due to input voltage? Because the emitter part is heavily doped then in this case also the depletion layer will be prominently formed in the base region and if this happens base region will be very much negligible and will be of no use.please explain??

[@osamasheikh8171]

The depletion region of EB junction is neutralized by applying a forward voltage of 0.7 volts if we consider diodes to be made of silicon crystal..

[@A.E_Academy]

in taking input characteristics why cant we draw graph for different values of Ic instead of Vcb

[@AAA-kt6ve]

Sharmila Arem Ic depends on Vcb

[@deepaknegi565]

Thank you sir