Sometimes I am compelled to think how these lectures are free......thank you sir for another awesome conceptual video...God bless you
@animeshtiwari1005 Жыл бұрын
Preparing for GATE?
@renatoberaldo2335 Жыл бұрын
Sedra Chapter 3 + this full course = you rock!!!
@IPLHava5 ай бұрын
i have a doubt, how to apply all these concepts in creating some practical applications.
@naveensagar11014 жыл бұрын
29:53 It should be exp(+(x+wp)/ln) With x < -wp As electrons on p-side decay along -ve x direction
@saicharanmarrivada50774 жыл бұрын
Yes,correct bro
@saisagardasari2274 жыл бұрын
No bro..I think minus should be included ..since it is a decaying fn.
@vamsimohan53694 жыл бұрын
@@saisagardasari227 hey try copying this 2\cdot e^{\left(x+2 ight)} on www.desmos.com/calculator you can see that + sign is correct for the curve needed
@louerleseigneur45323 жыл бұрын
Awesome Thank you very much sir
@MMTRINATHSOLASA4 жыл бұрын
Thnq sir 🙏🏻
@Virus-ke8xj5 жыл бұрын
hyperphysics.phy-astr.gsu.edu/hbase/Solids/pnjun2.html For more details☝🏻
@freeandreliablejeeprep820 Жыл бұрын
thank you sir
@praneshkandasamy31753 жыл бұрын
In 25:30 delta p(x) = delta p(Wn)*exp((Wn - x)/Lp) is substituted from what we learnt from continuity equation, but there we derived delta n proportional to exp(-x/Ln) after assuming that the semiconductor is not experiencing any field but that is not the case here. Then how can apply that result here. Please can anybody explain
@CHAUHANANAND-hn5mu3 жыл бұрын
There we assumed that somehow excess carriers are generated (remember shining light) and then we derived an equation for those excess carriers profile with respect to x. Here instead of shining light we are using electric field for excess carriers generation. but at the end the equation tell the excess carrier profile. Hope it helps. Correct me if I am wrong
@farihminan25122 ай бұрын
maybe it is because E=0 in neutral regions, the applied field drops the potential barrier in the depletion region. we derived the concentration in a region where E = 0. Correct me If I am wrong.