Transistor-9 - Substrate and Gate Leakage

  Рет қаралды 24,915

NPTEL-NOC IITM

NPTEL-NOC IITM

Күн бұрын

Пікірлер: 10
@Amansingh-nl4ev
@Amansingh-nl4ev 18 күн бұрын
@9:00 does pn junction have leakage current during Forward biasing?
@bharadwaj767
@bharadwaj767 8 ай бұрын
02::07_09-04-24_@IIIT-H substrate forward bias --> current flow & transistor scaling leads to Gate tunneling (low oxide thickness)
@mohdaarifanwar2471
@mohdaarifanwar2471 3 ай бұрын
13:42 increasing the thickness capacitance goes up???/
@swfs253
@swfs253 2 жыл бұрын
For gate leakage when you said 180 nm 130 nm 45 nm etc did you mean oxide thickness or distance between drain and source?
@AbhishekSingh-up4rv
@AbhishekSingh-up4rv 2 жыл бұрын
drain and source dis
@vivekartist6893
@vivekartist6893 9 ай бұрын
He was refering to the process node. It has nothing to do with the physical parameters like oxide thickness or channel length but its related to manufacturing process. Over nodes lowering, the dimensions of transistors reduced, thus accommodating higher number of them in a chip.
@muhammadhamzashahid9649
@muhammadhamzashahid9649 2 жыл бұрын
Excellent.
@monkinght6980
@monkinght6980 7 ай бұрын
Sir it's not clear whether you telling about gate length or tox thickness
@monkinght6980
@monkinght6980 7 ай бұрын
11:19 here
@abhayh924
@abhayh924 3 ай бұрын
@@monkinght6980 Neither. its just a technology parameter referring to the size of the transistor in its entirety
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