Welcome back to Semi Tech channel. This video talks about the short short channel effect namely drain induced barrier lowering and leakage power dissipation due to it.
Пікірлер: 35
@sakshisingh41974 ай бұрын
After lot of search here is a nice explanation
@arushsharma94163 жыл бұрын
much better than other lenghty monotonous videos thank you
@arelyvazquez9592 жыл бұрын
Very nice explanation! thanks
@sangphung6862 Жыл бұрын
your explanation is clear and easy to understand, thank you
@dhruven194 жыл бұрын
Very well explained sir !!
@anithag40542 жыл бұрын
Nice explanation.
@GautamKumar-eo7jj4 жыл бұрын
VERY NICE EXPLANATION
@jefferyaustin15713 жыл бұрын
Hi Edu, If you want to have more audiences for your channel, please create more videos about MOSFET just like this video. Since the background is EE, it is easy to step in semiconductor field such as FINFET. That is one of the ways for you can have more audiences. Wish you the best.
@semitech01 Жыл бұрын
Sure, we resumed it now. We'll put videos on Finfet soon
@sadi99452 жыл бұрын
source side depletion region cant increase because source is grounded as well as body is grounded too. so here barrier lowering is between source and channel.
@bharatsuthar9638302 жыл бұрын
Very well explain sir...
@vinayjjachar3365 Жыл бұрын
Nice explanation sir. Simple way of explanation for complex things is always good. Keep posting more videos like this
@semitech01 Жыл бұрын
Thank you, I will . Keep watching!
@supriyakaku17252 жыл бұрын
Good explanation
@jarikosonen40793 жыл бұрын
I don't know why they draw higher voltage at lower curve... If this could be calculated somehow it could make it clear. Maybe one of the good explanations found.
@rockingstone77003 жыл бұрын
nice one bro
@neerajhebbar73134 жыл бұрын
Great 👍👏👏🥰
@komalpatidar52074 жыл бұрын
YOU HAVE EXPLAINED VERY WELL, EAGER TO SEE MORE VIDEOS. PLEASE MAKE MORE VIDEOS ON ANALOG CIRCUITS AND LAYOUTS
@semitech014 жыл бұрын
Sure. I will upload for sure
@aswathipt80062 жыл бұрын
Well explained
@ramsaivelidandi67773 жыл бұрын
good explanaton
@prachitisharma Жыл бұрын
Thanks a lot
@semitech01 Жыл бұрын
Most welcome!
@rockingstone77003 жыл бұрын
bro please make a video on GIDL ....
@semitech013 жыл бұрын
Sure , I will put it out soon
@AviSanX Жыл бұрын
Hey what is that electron profile? Can someone explain it?
@semitech01 Жыл бұрын
www.semanticscholar.org/paper/Gate-Induced-Drain-Leakage-Current-in-45-nm-CMOS-Yuan-Park/d8ae3db50fdf372b2442a625608be03012c34923 Please refer to the graph to understand current and electron profiles in detail. For energy band diagram and electron profile you can refer to figure 3 of below link www.researchgate.net/figure/Band-diagrams-of-a-gate-substrate-junction-and-b-gate-drain-edge-for-an-nFET_fig3_3140206
@ranjithkumar-vh7ev2 жыл бұрын
When both the depletion regions met the device will off.am I correct ? Please correct me if i was wrong
@niranjankumar3207 Жыл бұрын
Yes true that
@rajneeshmishra551 Жыл бұрын
What is drain voltage
@semitech01 Жыл бұрын
Hi Rajneesh, Drain voltage is always more than source voltage but has been represented by a low level curve . Typically drain voltage for short channels are 1.5 -1.8 V
@prits7213 жыл бұрын
Great, thanks
@psymmm2 жыл бұрын
great.
@RESPECT-cd1md2 ай бұрын
is drain induced barrier lowerig and punch throw effect are same