Wide Bandgap SiC and GaN Devices - Characteristics & Applications

[@oldlifter530]

Human beings are wide band.

[@chuckjls]

The problem with GaN and SiC is that the devices are packaged in 125 to 150 C packages, except for GeneSiC. GeneSiC seems to be the only man. out there that realizes that the only way to replace silicon is to exploit the advantages that SiC and GaN have over standard silicon MOSFETs and that is very high TJ. One of the GaN vendors said they didn't put their devices in high temp packages because their customers didn't use there products in high temperature environments. So what? If I have the choice of two devices in the same size package and one has a Tjmax of 150 C and one has a Tjmax of 300 C and I need high power density, even if my operating environment is 40 C max I am going to use the 300 C part, because I can push twice as much power through the same size device. Or I will use it because I can extended the warranty on my product to some exponentially greater value.

[@bilalahmad9796]

or may be the packaging technology has not evolved as much as device technology has... i am not an expert on packaging, but i guess packaging industry is still struggling to come up with decent solution with minimum stray inductance and high temperature compatibility .

[@beomseoklee3127]

I think it is price matters. If SiC package that operates 150oC is enough in an application, definetly there is no reason to go with SiC package that covers 200oC in that application. Hence, it is a matter between OEM and suppliers.

[@codydowling1120]

Thank you- I enjoyed this quite a bit!

[@BillDemos]

5:40 I think you should refer to your home oligarchy first

[@calengr1]

11:00 Jag auto response to water cooling

[@damny0utoobe]

Gotta rewatch this whole GaN presentation

[@faidularcs]

Congratulations SiC

[@veerendrapratapsingh9983]

Love it.