175N. Noise models for pn-junction diode, bipolar transistor, and MOS transistor

[@justpaulo]

15:33 No. With Vds=0 the transistor is in triode and the equation is Id = u∙Cox∙W/L[ (Vgs-VT)Vds -Vds^2/2 ] . And now, if you take d(Id)/d(Vds) and set Vds=0 you get the result shown of gd0 = u∙Cox∙W/L (Vgs-VT)

[@Jason-qy9vw]

How about the noise model for a reverse biased diode?

[@samihawasli7408]

I presume it would depend on how reverse biased it is. Before breakdown the small signal model for a diode is the depletion capacitance in series with real resistance associated with the undepleted p and n regions. The same thermal noise associated that resistance would exist. The same shot and flicker noise would appear in parallel to the depletion capacitance. If you reach break down voltage there is a specific avalanche noise (Ali touched on last lecture) which would have to be added as well. In breakdown I would still presume all the other noise sources still exist. The thermal noise due to the real resistance. Shot noise due to the transitional event of an electron tunneling through the barrier. And 1/f noise due to imperfections in the semiconductor. Take all that with a unhealthy amount of salt.