Thank you so much for making these videos. I would not have done nearly as well in my semiconductor courses without this. Please make more videos! These are the best videos I've seen. You cover essentially an entire semiconductors course with such detail and clarity and I have never seen that before.
@kemalbasaran8316 Жыл бұрын
Before this video I didn't understand anything about electric field and electric voltage relationship in pn junction. Thanks for this video...
@MohamedSayed-fi5re7 жыл бұрын
I owe my success in my semiconductors module to you, can't thank you enough!...Please keep going and make videos for MOSFET
@yangYang-df2zy8 жыл бұрын
holy.......you just super awesome! so clear! thank you very much!
@mellowxiumin8 жыл бұрын
It's very clear and helpful! Such a nice and short video. Thank you so much for making it!
@mohitrongare40336 жыл бұрын
You are much much better than ace and made easy prof specially Ramesh sir
@prashantpandey22993 жыл бұрын
Yes ramesh sir only dances in class
@ricardoabraham4016 Жыл бұрын
thx for the video sir, gods bless you
@Captain_Rhodes8 жыл бұрын
at some point in history there must have been a person who had the idea that these diagrams were a good way to visualize semiconductor physics. If only that person had been murdered as a child, people in 2016 might have a different visualization to draw from and I might actually understand this.
@basileleftheriades97366 жыл бұрын
William shockely, and these diagram are pretty intuitive man
@Arif_08994 жыл бұрын
i can feel u bro
@student68304 жыл бұрын
to be fair, this was first taught in the 1950s and you couldn't do much better then
@soumadeepsingha9994 жыл бұрын
lol
@69revenga6 жыл бұрын
I usually have difficulty understanding indian accents, but this has been really helpful.
@4990raghu8 жыл бұрын
Sir, in the reverse bias , the saturation current is the drift component of the depletion region. Will there be a component because of the movement of the electrons and holes away from the junction region (the region which was neutral in equilibrium condition) which was responsible for the increase in the depletion width.
@maxwellmatin63607 жыл бұрын
thanx a lot sir , God bless u.
@sarthaksinghal8116 Жыл бұрын
Excellent video, cleared so many doubts so easily, thank you very much
@YoussefAhmed-uv7ti8 жыл бұрын
is the type of equilibrium here static or dynamic ? thanks
@alvinaug38445 жыл бұрын
what about energy band diagram of biased p type semi conductor?
@Light-vt8en5 жыл бұрын
goodness how do you do to explain so well !!
@saravind31534 жыл бұрын
Wonderful explanation sir ,thanks a lot
@maximus70434 жыл бұрын
It is all great! BUT, I would like to have notes, of your blackboard :) thanks a lot !
@ahmedidriss89847 жыл бұрын
Why does the electric field point from the +ve side of the depletion region to the -ve side ?
@alvinaug38445 жыл бұрын
property of field lines.it moves away from positive charge.
@praneethkumar.p33716 жыл бұрын
Why conduction band and valance band of p-type and n-type are not at same level.
@anasuabhattacharjee54622 жыл бұрын
I could not understand how u drawn the electric field-vs-x curve from density-vs-x curve, Pls explain.
@coolwinder3 жыл бұрын
10:40 Why dont we take into the account not just negative acceptor ions, but also diffused electrons that came from n side?
@lies42123 жыл бұрын
have you got it bro?
@coolwinder3 жыл бұрын
@@lies4212 I think not :D
@lovkeshjangra6746 жыл бұрын
Why should Ef to be constant throughout the length.....
@ROSSIRAVA7 жыл бұрын
You mentioned that the distance of uncovered ions on P side is less than on the N side (Width of P is less than Width of N) because the P side is highly doped. Can you elaborate? Or maybe can you give more explanations with this relationship?
@techgurukula7 жыл бұрын
Hi Darwin, Nd Xn = Na Xp (charge neutrality). To keep this true and satisfy Na > Nd, Xp should be less than Xn. Dopant density is high on p-side w.r.t n-side. n-side should be depleted for more distance to expose same amount of charge equal to p-side. As charges exposed on p-side should be equal to charges exposed on n-side (charge neutrality). For same amount of charge to be exposed on both sides, more dense doping side needs to deplete less distance w.r.t low doping density side. Hope this helps! Thanks, Techgurukula.
@theWikiNote6 жыл бұрын
please share the name of software usedd?
@susmithatalupula97913 жыл бұрын
Why charge is neutral outside the junction
@divya47526 жыл бұрын
Great lectures
@raghuveera35197 жыл бұрын
can u explain Poisson's E and charge density relation in simple ..
@NaveenSword6 жыл бұрын
We can use (Nd*Xn= Na*Xp) this equation to find the width of n and p side directly right? Why do we have to Xn=WNp/Na+Nd for n side and the same for p side??? Pls help me...
@techgurukula5 жыл бұрын
if Total depletion width is given (W) and doping concentrations are given - finding Xn and Xp directly: Xn = W * (Na/(Na+Nd)), Xp = W * (Nd/(Na+Nd)). if 3 out of 4 are given in the equation (Nd * Xn = Na * Xp), we can use this.
@renatoberaldo2335 Жыл бұрын
Dear Kula, at the time 13:30. You didn't explain why Xn is more intense.
@trapsoldiers2 жыл бұрын
Is "diffusion potential" and "built-in potential" same thing?
@shubhamkawde91254 жыл бұрын
Hello sir, How to find electric field at particular point in depletion region.
@prashantpandey22993 жыл бұрын
E max pata hai aur xp ya xn pata hai to right angled triangle bana ke xp se xn tak kahi bhi electric field nikal sakte hai. Proportionality rule lagakar
@shubhamkawde91253 жыл бұрын
@@prashantpandey2299 thik h pandu
@kirankumar58683 жыл бұрын
You are good
@gtaunlimited0078 жыл бұрын
how the difference in Ec calculated as qVbi? at 21:10
@techgurukula8 жыл бұрын
+arkabsu The bent in the Band, represents Electric field present, which is directly proportional to the slope of the Ec (or) EV (or) Ei => Electric field is related to the variation of potential. Hence the slope should be equal to the q times the potential as the Ec/Ev/Ei are in electron volts. Hope this helps! Suggestion: If you see the videos in sequence as put up in the playlist, you wouldn't get these doubts. If you still get doubt's, feel free to ask. Thanks, Techgurukula.
@ganeshniranjan20035 жыл бұрын
For separate p and ntype Efn and Efp have different energy,but in pn junction diode how they have same energy level.please tell me
@techgurukula5 жыл бұрын
If fermi level is not same through out the device, there would be net current flow - which any way would drive the fermi level to be same through out the device. This is when we say the diode is in equilibrium. I believe it's better explained in the video - hope that helps.
@ganeshniranjan20035 жыл бұрын
@@techgurukula thank u sir for it reply .i will see the video now.
@amandeeppandey19015 жыл бұрын
Sir how u written equation for concentration... because in some privious lectures we have derived some other formula
@techgurukula5 жыл бұрын
That equation is discussed in this video - kzbin.info/www/bejne/Z5iTY4l8hLWkb6s Please watch the playlist in sequence, they are put in logical sequence - shouldn't get questions. Playlist: kzbin.info/aero/PL311CA3047EB6EC58
@amandeeppandey19015 жыл бұрын
Sir according to theory discussed....the drift current flows after the diffusion stops ...so there will be some time difference between drift and diffusion current so why we are taking them equal??
@amandeeppandey19015 жыл бұрын
Plzz reply
@dollymarz21814 жыл бұрын
what is ni ?
@vaibhavvalandikar39137 жыл бұрын
Sir, please upload bjt,mosfet,jfet also
@myanimelive2872 жыл бұрын
Sir please tell me book name?
@drspdpp1234566 жыл бұрын
respected sir holes do not diffuse from p to n type under unbiased condition of pn junction,, but only electrons holes recombine at junction so please correct it sir
@techgurukula6 жыл бұрын
I would still support the diffusion - because of the following reason: diffusion current will be in one direction and drift will be in the opposite - if we don't consider diffusion, it cannot be explained. Both currents will be present in equilibrium - only that they are equal and opposite. Hence, net current is zero. Under forward bias, Electric field decreases. Hence drift decreases relative to diffusion, and resultant current is due to Diffusion. check the other videos. Thanks, Techgurukula.
@ankitdhaker1114 жыл бұрын
thanku sir
@yashstudio73963 жыл бұрын
Sir all is fine except you have not use volume in the formula
@yashstudio73963 жыл бұрын
Sir formula of Vbi has a mistake
@ALLIRIX8 жыл бұрын
10:45 What is Ei exactly?
@ALLIRIX8 жыл бұрын
+David My understanding is it is the mid point between energy needed for thermal generation and energy at 0 Kelvin.
@techgurukula8 жыл бұрын
+David Ei is Intrinsic Fermi Energy level (Fermi energy level for Intrinsic semiconductor). For silicon, it is approximately in the mid of the Energy band gap ((Ec+Ev)/2). Refer to this Video: kzbin.info/www/bejne/opSbg2CtpqqhoZI for more detailed explanation and derivation. Hope this helps. Thanks, Techgurukula.