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Ferroelectric Field Effect Transistor (FeFET) Memory Concept | Fraunhofer IPMS

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Fraunhofer IPMS

Fraunhofer IPMS

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Fraunhofer IPMS and XFAB present a memory array demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer.
More information: s.fhg.de/FeFET

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