Gallium Nitride Reliability in Real-World Space Applications Webinar

Using Test-to-Fail Methodology to Accurately Predict Projected Lifetime of Gallium Nitride FETs and ICs in Space Applications.
The adoption of GaN FETs and ICs in space applications is driven by their superior performance characteristics, including high efficiency, high power density, fast switching speeds, and radiation tolerance. These benefits contribute to improved system reliability, reduced weight and size, and enhanced mission capabilities in the challenging and demanding environment of space.
During this webinar, we explore how the Test-to-Fail methodology enables precise projection of the lifetime of GaN FETs and ICs in space applications including DC-DC conversion, motor drives, lidar, and electric propulsion.
Watch the replay of the webinar to learn more about:
1. Introduction to GaN technology and its advantages in space applications.
2. In-depth exploration of the Test-to-Fail methodology and its applicability in accurately forecasting the projected lifetime of GaN FETs and ICs in the extreme conditions of space.
3. Real-world results showcasing the exceptional reliability of GaN devices in space applications.
4. Question and answer session to address your specific queries and concerns.
By watching the replay of this webinar, you will gain invaluable insights into the reliability of GaN technology, particularly in the context of space applications. Our expert speaker will provide you with actionable knowledge that can empower you to make informed decisions, enhance system performance, and maximize the lifespan of your space projects.

[@MasoomaAli-eh3qo]

This is very interesting. I would love to learn more about using widebangap semiconductors in space

[@EPCCorporation]

We would love to help. Feel free to reach out to one of our GaN Experts at epc-co.com/epc/about-epc/contact/ask-a-gan-expert