Atomistic mechanisms for polarization switching and wakeup in HFOX-based Ferroelectrics

By Sergiu Clima (IMEC)
Title: Atomistic mechanisms for polarization switching and wakeup in HFOX-based Ferroelectrics
Abstract:
Recently, with the development of the o-HfO2, the ferroelectrics have regained the increased interest in the device community. In an attempt to understand the atomistic mechanisms driving the polarization switching, we observe a fine balance between dipole-field energy and anion drift force that defines the switching mechanism during polarization reversal. We show that constrained relaxation can lead to 90° polarization rotation (domain deactivation). Intrinsically, the Si/VO-doping can switch faster than undoped HfO2 or HfZrOx. By simulating the switching barrier heights in strained HfO2 systems, we predict what type of crystalline structures might phase-transform during the wakeup phase of the ferroelectric operation.
The INTERSECT Workshop was held in Barcelona, at UAB’s Casa Convalescència, on November 10-12 2021.
For more information about the workshop: intersect-workshop.icn2.cat/
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 814487.