Common-Emitter Transistor (Output Characteristics)

[@dequeue3301]

i searched so many sources, no one gave such a beautiful qualitative explanation of the input/output characteristics like you. Thanks a lot!

[@prikshatsharma2770]

May ur subscribers reach above 1M soon!

[@geethach5596]

At 4:16,you said as ib decreases,ic increases. But,from the collector equation if we keep icbo constant ic is directly proportional to ic and from the graph also we can find that ic increases with increase in ib

[@psaikiran9831]

Please try to understand it from lower level, if through base junction the current doesn't flow, all charge carriers flow through collector, thus increasing collector current

[@AKASHKUMAR-fp3ii]

just refer the before lectures as the Vcb output voltage in cb config increases the depletion layer of the base increases the effective width of base decreases so the emitter current can flow easily refer it before lectures you can come to understand

[@girijaveera3743]

Yes I also got that doubt

[@sudhakarchekuri5589]

Yes

[@swaroopchebolu4087]

At 4:00 you said that with decrease in the base current there would be an increase in the collector current as the electrons can directly enter the collector region, but how come the electrons from the emitter enter the collector directly when base is the intermediate between them ?

[@AKASHKUMAR-fp3ii]

when the Vce changes the width of the base decreases as the depletion in junction 2 will be high so Ie will flow from emiitter to collector

[@ishwarkhosla3890]

Amazing and Deep Explanation. Thank you Very Much.

[@kanhaiyayadav4417]

at 3:20 you said that slope is not equal to zero because Ic(output voltage) depends of Vce(output voltage), but in case of output characteristic of CB mode bjt Ic(output voltage) also depends of Vcb (output voltage) according to early effect then why is the slope zero in that case;

[@lightyagami6345]

very helpful video...... best explanation

[@divyarao6280]

Superb as always

[@bropro2001]

sir why r u not cutting the y axis by the curve for showing the -Vce as u showed in common base configuration?

[@TharunKumar-yx8cy]

Vce=Vcb+Vbe --------(1) Here Vbe is constant. Vcb=Vce-Vbe----------(2) Since , Vce is very low (observe the graph) Vcb is also low . That means Vcb is not having enough strength to reverse bias the collector-base junction. So the saturation region is not shown in 2nd Quadrant.

[@dwinovianto1250]

in 6:51 we can write also Vbe = -Vce - Vcb, so beneath diode in reverse bias condition right?

[@irvingrodriguez3708]

Very helpful video, thanks a million !!!!!

[@UECAshutoshKumar]

Thank you sir ❤️

[@sreekumar7177]

Why Ib is not horizontal as those Ie obtained in common base?

[@niranjangupta3009]

at 5.00 you said that if Weff is decrease base current will decrease consequently collector current will increase.... but as we know if we neglect reverse saturation current collector current is directly proportional to base current by Ic=(beta)Ib..... means if we increase Base current collector current will be increase both statement seems correct but this are contradictory...

[@RahulKumar-hg7yd]

Beta = (alpha/1-alpha), alpha is like a measure of how many electrons made it through base to collector without having to recombine with the holes in base. So, when then W(eff) decreases less electrons recombine in base and more make it to the collector. Therefore the alpha increases as W(eff) decreases. Now our equation for beta = (alpha / 1-alpha), in this beta increases as alpha increases. So the increase in Ic and decrease in Ib because of changes in W(eff) are compensated by increase in Beta. P.S - This is my own conclusion, I am not 100% sure if this explanation is correct or not.

[@riseabovehate9476]

Rahul Kumar I think you are right !

[@KirkHammer-fj2of]

@ Rahul kumar, your conclusions are true, friend

[@avinashbarik1293]

Don't believe me just watch

[@gopichanddasari4848]

But the slope in that graph is not zero... as ib is constant ic should be constant but with base width modulation now beta will increase with reverse bias at collector juntion hence ic increases.. ic = beta × ib (ib = const but beta changes)

[@shivareddy8697]

at 8.00 in the video,how did u assume that v(be) is positive (while determining which is active region and which one is saturation )

[@Madhusudhan-fi1ci]

Simple and elegant explonation👍

[@ASHISHKUMAR-jh9kw]

Best video 👍👍👍👍👍

[@sunrayseducation]

Why we draw input characteristics by varying output voltage but output characteristics by varying input current. Can anyone tell this...

[@ramat9109]

Based on the h _parameters formulas.....

[@ramat9109]

Based on the h _parameters formulas.....

[@steevenkenny9791]

Thanks a million SIR... love the videos

[@hashiska.5358]

how are we changing the value of base current? Through V(bb)?

[@Himshu143]

it is about "what if ? "

[@aravindsubhash3740]

Why in the output Chara of common emitter the saturation region does not go to negative like Common base configuration?

[@anandtripathi7493]

Aravind Subhash 2 days ago Why in the output Chara of common emitter the saturation region does not go to negative like Common base configuration cannot be operated in saturation region in forward active mode. to operate in saturation the power supplies are reversed as a result of which Vcb becomes negative.......and even in CE mode thoug Vce is positive, Vcb remain negative.

[@deepsaur]

Even in CE configuration if we increase Vcb, Weff should decrease and Ic should increase then why there is difference in o/p characteristics between CB and CE configuration at 4:18

[@AnoNymous-po5sx]

Even if we increase Vcb in common base, the chance of recombination is more. But in common emitter, the chance of recombination is less by increasing Vce. Therefore Ib reduces which leads to increase in Ice. It means Vcb has little to no impact on Ic but Vce definitely has an impact on Ic.

[@VallalaSaiCharan]

Why you are considering only input currents for output characteristics and output voltage for input characteristics

[@annan2551]

my question is that sir....why collector current is not increasing linearly by increasing collector emitter voltage. why collector current is going to be almost saturated after certain value of Vce. thank u

[@amanraj-fj2cr]

reverse bias ke karan limited current flow hota h

[@venkateshanantapalli4343]

I agree with you had said but it would be better if had explained in a conceptual manner rather than by equation. Is any one could explain the thing in more conceptual way.

[@313Ritesh]

The collector-emitter junction is reverse biased so why would it increase linearly. Conceptually; When we increase Vce the reverse saturation current will increase and also due to early effect more charge carriers will enter the collector region. Thus on increasing Vce the collector current is increasing somewhat as you can see there is a slope in the characteristic, unlike the common base characteristic where solpe is zero

[@naveenj3627]

why Vbe is not used as input parameter while drawing output charecteristics?

[@vamsikrishna2329]

Output characteristics are plotted between output current and output voltage

[@naveenj3627]

@@vamsikrishna2329 while we plot output characteristics for different values of Ib and not Vbe.now my question is why In is used as input parameter and why not Vbe

[@gunjanaggarwal9917]

How Vce positive for small value is saturated ? Brief explain

[@adityakasina2679]

In the saturation region as you have said both diodes connected back to back are forward biased which reverses direction of collector current. Now my doubt is considering npn transistor as node Emitter current(Ie) flows away from the node Connector current(Ic) flows away from the node Base current(Ib) flows into the node Which violates Ie=Ib+Ic Instead we get Ib=Ie+Ic How can you justify it??

[@anandtripathi7493]

refer Ebber-Molls model

[@rahulchanana8151]

thankx a lot sir for these series of lectures , rly needed ☺

[@TheMyPgk]

Good Explination

[@muhammadhammadsarwar698]

Sir but we are checking the characteristics for the common Emitter configuration but for the back to back diode intuition you used common base configuration doesn't it make any difference?

[@hanishgopi]

why Vcb is negative we did'nt applied any voltage across Vcb in common emitter ? How it became negative

[@sunilrawat2717]

Thanx a lot very nice video

[@pavanpai2439]

Amazing lecture, thank you sir

[@md.sajjadhosainsagor8469]

really so helpful..

[@sanskrutinikumbh9704]

Thnku sir🙏

[@astaragmohapatra9]

This is awesome

[@AmritSingh-fd5ld]

From where you studied to teach brdr.. fantastic way of teaching.. God bless u 🙏💙

[@famousmagicintheclassmoham4848]

awesome nice explanation bro

[@kalaivananmudiyappan2696]

Thanks a lot Sir. .More details and clear explanation Sir

[@rituhalder835]

Sir , shouldn't the input current be in micro amps ? The input current is small in CE conf !

[@justadreamerforgood69]

Yes babe, input current is in micro amps and output is in milli amps

[@mohammedrafeeq4902]

But how actually collector current is increased as the base current .please explain theoretically sir.

[@bojjaganesh1393]

at last i confused but it clears my doubt thank you very much

[@sandilyashivam]

U have added that decrease in I-b makes increase in I-c . My question is beta is fixed for transistor so how the above up down analysis is correct.

[@anandtripathi7493]

shivam just dont go with beta factor even beta increases by 1% per degree centigrade .........Ib is due to recombination of charge carries, but as Vcb decreases and it reduces electrical base width and recombination decreases hence majority charge carriers reaching collector increases which leads to increase in base current. also base current is in microA the changes due to early effects are small and negligible. at present just stick to this.........

[@bhawna15diaries]

Since the majority carriers emitted by emitter has to remàin constant by relation..ie= ib+ ic, so after further increasing Vcb , due to early effect, effective base width reduces leading to less recombination of carriers in base thereby Ib decreases but Ic increases since Ie has to be constant

[@lokeshjagadeesh2492]

Super bro 🎉🎉🎉

[@vikassharma-gg3qi]

when Ic is -ve i.e. In cutoff region current is going from p to n. then how it is reverse biased?

[@jojisamuel6765]

In cutoff region ic =0

[@AKASHKUMAR-fp3ii]

normally the collector base junction is reverse biased in both type of transistor the changes made in junction 1 that is base emitter junction which should operate as forward biased in active region

[@shahinvv2647]

Whenever base current decerese Ic also decerese Ic -BIb how Ic increse?

[@sheerin_jjk1322]

Sir you've written when Ib decreases Ic increases but in graph Ic have increased with Ib ?

[@anuragborgohain8684]

at 8; how ib

[@tarika543]

@Neso_Academy how it is possible when Ib inc. Ic inc, (you that from the graph) . If we inc Ib, Ic should dec. PLEASE REPLY

[@northkoreasupremeleaderoff721]

Ic=β×ib so🤷‍♂

[@sunrayseducation]

You are saying this because of ie=ib+ic relationship. But you forget that in this case you are considering ie constant. But ie isn't constant. Because in common emitter config. when we increase ib it increases recombination rate in base so for emitter current less recombination occurs at base, thus it increases ie and ic. In real world analogy base region is a moat and current ic/ie are people crossing it. When we increases ib the width of moat decreases thus more people can cross it.

[@oneinabillion654]

@@sunrayseducation Hi, so we just have to consider some magical base recombination to account for the Ib increase right?

[@anandtripathi7493]

the video is good but one must refer some reference books...

[@oneinabillion654]

Why?

[@victorba-murielprincewill7006]

I agree, especially in the output input characteristics.

[@i_will_do_it]

@@oneinabillion654no need to refer

[@footballdownfield8137]

Rl boystad

[@i_will_do_it]

@@anandtripathi7493 no need

[@sujoy7471]

Thanks sir. I'de doubt in saturation regeion for positive Vce. But you explained it very well. 🙏

[@divyarao6280]

Please make videos for communication ASK, OSK PSK

[@abhishekjan9026]

Thanks sir

[@dipamonigogoi9360]

what is i cbo?i havent seen previous videos.please explain

[@bhaskarrao5254]

Reverse saturation current

[@AKASHKUMAR-fp3ii]

reverse saturation current in common base config. where leakage current flows from collector to base when base emitter is open circuited

[@maximillianfamkhiungvuia1762]

How can base current remain at a certain value, say 0.2 mA when the Vce is increasing? From your equation, Vce=Vcb+Vbe When Vce increases, Vcb increases, thus early effect decrease the value of base current, But from the graph, it is mentioned that base current is remained the same at 0.2mA. How do u explain this?

[@maximillianfamkhiungvuia1762]

I think a better way to explain it is when Vce++, Vcb++, due to early effect, alpha++, so beta++, Reffering to equation Ic=beta x Ib Since Ib is constant, when beta ++, Ic also ++, We conclude that Vce++, Ic++

[@abdulkhader9024]

please add input and output characteristics of common collector transistor

[@MeenakshiSharma-gn1oe]

Can anyone explain at last how region A and B simplified....its a little bit confusing....🙏🏻🙏🏻🙏🏻🙏🏻

[@313Ritesh]

How is Vce= Vcb + Vbe. How can we derive it?

[@deepshah737]

Vcb +Vbe=Vc-Vb +Vb-Ve=Vc-Ve=Vce

[@hasherkhan5280]

please upload power amplifier trasistor and its types class A, B AB C

[@sreekumar7177]

How Vcb increase when Vce increase?

[@pratimamodi607]

sir still I m not getting the regions u named

[@meghashaw4563]

it is perfect

[@N12458]

underrated comment.

[@pulkitnandal6301]

grt wrk sir

[@SandeepSingh-ki3ev]

Sir in this çe lecture u told IC current depend on vce and also on vcb due to change in effective width of base,so why didn't u apply same concept in common base output characteristics why IC doesn't depend on vcb there?

[@geetanjalisharma6360]

In CB config., IE was fixed that is why we have not applied early effect there.

[@pavankrishna5886]

Give me good explain in cut -off&sat region

[@HamzaShahzadEB_]

What is the logic behind considering two diode to find out the region literally didn't make any sense to me kindly make it clear.

[@surenderdaasari8469]

Ib is in micro-amperes not in milli-amperes

[@swagplayz9670]

Sir I need notes

[@jutlavasantha4176]

when Vce becomes negative, the whole expression should become negative. can you please explain it in brief sir.

[@komalkumari-mu2qu]

The range of beta u told is starting from 50 but in below question ..we got 19 also .how??

[@AKASHKUMAR-fp3ii]

i am also having same doubt

[@King58468]

6:15

[@tanzimlabib5081]

this is the tutorial..when you don't know something about EEE

[@prat1024]

speed 1.5, you are welcome

[@N12458]

I watched it on 2, YOU're welcome :)

[@lokeshjagadeesh2492]

Z sir could you please explain in telugu in this video sir🧐🧐🧐🧐🧐👍👍

[@sreekumar7177]

How Vce = Vcb + Vbe

[@milindraj1479]

why u not edited this video that is micro amperes lekage current!!!!!!!!!!!!

[@waseemaonmehdi7515]

vvvvvvvvvvvvvvvvvvvvvvvvvvvvvvvv interesting sir

[@santhoshthota4778]

Failed to explain saturation region

[@nesoacademy]

Follow the next lectures.

[@SachinSingh-gg9md]

very much confusing leture...

[@akshayrahangdale8511]

too detailed

[@VikashSingh-vn4qh]

Fu*k ece dimag ka dhai hojarha 🙃

[@mahnoorrahim1809]

:/

[@zezo2895]

Thank you sir ❤