Common-Emitter Transistor (Input Characteristics)

[@SauravKumar-yo8hb]

Thanks

[@bhargav1811]

When w effective decreases means concentration gradient increases and base current should increase which u told in common base then why that logic is not applied here??

[@nabindhami364]

Exactly my question too

[@goutamsutradhar9566]

Because in common base configuration the electrons movement increased towards base thus increasing the current in IE(opposite). Similarly in the common emitter configuration decrease in the w effective Increases the electrons in base thus increasing IE current And further decreasing IB current. Here as only IB is needed for the graph ,IE is not mentioned. I think this is how it works.

[@aadii1706]

@@goutamsutradhar9566 combination decreases then collector current increases hence base current should decrease... In common base , collector current increases therefore emitter current also increases as Ie=Ib+Ic

[@luckytech9064]

@@aadii1706 kya bhai polytechnic lecturer me hua h kya

[@aadii1706]

@@luckytech9064 ??

[@tejashreerasam9831]

Nice explained sir . I understand difficult concepts very easily. Thank you sir 😊😊😊 🙏🙏🙏

[@AnoNymous-po5sx]

8:28 gave me a relief. My head started pounding when you wrote milli amps instead of micro amps lol

[@ayushipaikane1503]

SAME!! I was soooo confused

[@vikashtiwari8382]

Same 🤐🤐😬😬😬😬

[@AnshulSharma1997]

Why it must be in microamps

[@linhnguyenduy1904]

Thank you sir, you've helped me alot in EC.

[@susamaranidei2981]

CE not EC

[@justadreamerforgood69]

@@susamaranidei2981 Shush

[@kirtxn_]

On decreasing width of effective recombination , iB decreases but iE increases

[@santudhali3]

nice sir!!! u told us the basic caused of everything!!! thank you sir...

[@PramodKumar-bu2uf]

Hi

[@santudhali3]

@@PramodKumar-bu2uf what

[@raviyadav2552]

Awesome explanation sir . i understand everything

[@dikukhanikar2837]

Can you explain how emitter current increases in CB configuration but the Base current decreases in CE configuration for the decrease in effective width of base region.?

[@simplemathematics7792]

In CB configuration also Ib decrease since weff decreases implies recombination decreases ,but in graph we plot the Ie not Ib there ,here we are plotting Ib same concept there and here nothing changed.

[@nageswarrao2848]

Sir if recombination decreases input current should increase sir.as u told in common base configuration.But how decreases

[@obamaengineer4806]

Exactly my doubt too😢😢😢

[@aadii1706]

Emitter current increases therefore base current decreases and here base current is input current..

[@rehanahmad6236]

Thank u Sir. Q: What will be the effect on the breakdown voltage across CB on fixing the values of Vce at two different values?

[@shaikriyaz7519]

At the end of the video,to draw the input characteristics, Vce should be increased or decreased??

[@NAVADEEPSURAJKATIKIDALA-mv3hc]

should be decreased so that Ib will increase

[@KINGคภ]

If we consider PNP transistor the input characteristics is drawn between Veb vs Vec??????

[@mervindcosta8192]

Really great explanation with the ease of the viewer to go back and rewind. Keep up the good work and keep on inspiring.

[@apostolidispeter2499]

These videos are really helpfull, thanks for the hard work

[@anujgupta9542]

Sir, why are we applying Vcb in common emitter configuration?

[@imqwerty5171]

How did you reverse biase the collector-emitter junction? They're both n.

[@johnsonshougaijam8127]

Follow the books as well they all wrote the same what he tought here

[@ananyasaxena948]

Really nice....Ws confused a lot regarding thèse characterstics...bt now i got the basics...👍👍

[@mehdi7136]

very great explanation I have been looking for such training about this concept for a long time thanks a lot 🙏🙏🙏

[@Amitsingh8005i]

Sir at 3:39 current should be in microampere ???

[@VishalKumar-rf4kq]

Love from Haryana ❤❤

[@achintize]

Hi..0:50 you said Ic is output current...is this right?

[@Devkumar-ut7rk]

yes

[@Devkumar-ut7rk]

i think u have done your btech

[@vimalkumarchaudhary1384]

in common emmiter the early effect case is different than common base please explain sir

[@abdelmoumenederoueche369]

It is the same. For common base we were talking about I(E) which increases with increasing Vcb . Here we are talking about I(b) which decreases

[@zeyadahmed731]

@@abdelmoumenederoueche369 I can understand why I(b) decreases with increase in Vcb. But I didn't understand why I(E) increases with increase in Vcb. I can't understand how I(E) depends on Vcb.

[@abdelmoumenederoueche369]

@@zeyadahmed731 try to watch from 4:30 again. Because we increase Vcb the width of depletion layer increases between C and B which mean the base region will be smaller it will have a width ( weff) less than what was before. Thus, less combinations will occur in it, so I(b) will decrease

[@zeyadahmed731]

@@abdelmoumenederoueche369 thank you, but I said I understood the effect of Vcb on base current. My question is for a previous video, which is how the decrease of Weff due to increase of Vcb can increase the emitter current I(E). Thank you again 🙏

[@abdelmoumenederoueche369]

@@zeyadahmed731 yes sorry for that. I recommend you watch this video. I had troubles understanding it last semester so don't worry x) kzbin.info/www/bejne/mnKcfJqOgbuLhcU

[@raunaksahu_IIT-BHU]

Here input current (Ib) decreases with increase in Vcb whereas input current(Ie) increases [IN CB configuration] .... its because concepts are same in both just direction of input current in opposite?? Is that so?

[@aryansahu8614]

same surname

[@jrithwik7574]

Sir why are we checking input characters only at diff. Output voltage and output characters only at diff. Input current

[@bengeo7832]

Why is Vbb not equal to Vbe? What condition(s) could make them to be equal?

[@sathishkabekody3083]

There is a resistor so vdrop is not equal

[@bishwajeetkumar3441]

In common base, effective width (reduction in width) cause emitter current to increase (due to conc. Gradient) But, In common emitter, why don't effective width ( reduction of width) cause increase in Ib ( input current) to increase

[@mint7325]

Same q.. pls anyone explain us

[@jayantsharma_]

I think emitter current is more significantly because of flow of electrons towards collector region. So by increasing reverse bias voltage, more electrons flow towards collector region and hence Ie is increased. But base current was produced because of electrons recombination with holes, decrease in recombination decreases base current. Which means increasing reverse bias Vcb (Vce in case of common emmitter) decreases Ib.

[@mint7325]

@@jayantsharma_ passed the exam.. 😅 thanks tho 😊

[@jayantsharma_]

@@mint7325 I hope I clear my exam tomorrow 😅

[@mint7325]

@@jayantsharma_ May you get great marks, Ameen. Best wishes!

[@venkateshanantapalli4343]

Current is due to the flow of electrons(or holes) but not a result of recombination of holes and electrons. Since recombination rate decreasing how can we say that there is less base current? One more thing is if a number of recombinations are decreasing means there are more free electrons and holes which much constitute a high current. But the thing here is the number of electrons coming from base to the battery terminal is reducing due to recombination rate. So can anyone explain the relationship between the number of electrons coming out of the base and recombination rate?

[@saptarshipal7393]

Because for n-p-n transistor the base current supplied the holes in base that were lost due to recombination (along with providing holes that move towards the emitter from base due to diffusion - since forward bias ). As recombination is less, the base current is also less.

[@as72333]

one of the reasons for this might be that the base is lightly doped and offers resistance to the flow of electrons so rather than contributing for base current they find it more easier to contribute to the collector current since the charge carriers that were majority have now become minority in the base collector region hence they contribute to collector current more.second point is that the area of the recombination decreases meaning electrons and holes are concentrated in less area than before and there is concentration gradient so they flow towards the emmiter to base and then towards collector .if you wish to find the relationship then alpha can help you as alpha is the range of .95 -.98 so majority cuurent from emmiter goes towards the collector and remaining .02-.05 is for recombination which is evident from the fact the base cuurent is in the orders of nano or micro amperes while collector and emitter currents are of micro amperes(for coomon base)

[@ManishYadav-gx8ce]

at 3:28; IB should be micro amps instead of milli amps.

[@devanshtrivedi3905]

Same doubt? Please help

[@arvindaru2250]

Tq sir 😍😍😍

[@shahzadnasir1052]

why is input current ib in case of common emitter configuration and ie in case of common base configuration?

[@udeepshrestha8179]

General convention is prefer *Ib* as *input current* if base is *not common* otherwise choose *Ie* as *input current* prefer *Ic* as *output current* if collector is *not common* otherwise choose *Ie* as *output current*

[@cesare4926]

That is confusing. Is there a reason that this is the general convention ?

[@vinayak5april]

Input current is the current which flows through the input resistor, so Ib is the input current in case of common emitter and Ie is the input current in case of common base

[@shantanusaha6784]

Hi, let me throw some light in order to clear this confusion. For Common Emitter we have emitter terminal is grounded. i) If you closely observe the 1st diagram of this lecture, you can see that in input we are having only base and emitter terminal which are biased, so the input current is of course base current. ii) Similar logic can be applied for CB mode but here base is grounded so the input current is emitter current.

[@kameelamareen]

Man you are the best !!!!!!!!!

[@420bruce2]

How base width modulation is done @ ce Configuration bcz no reverse bias in cb

[@420bruce2]

How vcb in ce configuration

[@aryanpatel368]

sir please clear about me that if biasing potential Vbb then why we write Veb(fb)and vccand vcb(rb) please explain

[@neeharika3433]

How the eq Vce =Vbe+Vcb comes?

[@UECDishaKhattri]

Amazing got what needed 😘😘😘

[@afsanaahmed8742]

Why Micro Ameter is connecting in the input of CE configuration?

[@sreekumar7177]

How we get values of VBE for graph?

[@amitweb19]

Sir, In your Digital Electronics playlist there are two videos which are 'PRIVATE' ( Video no. 98 & 205 )... Plz make them public... :)

[@PB_293]

🥺🥺

[@PramodKumar-bu2uf]

Pramod ho kiya

[@puneetkumarsingh2989]

Why does on increasing V(CE), V(CB) also increases? Why does nothing happens to the V(BE)? I'm confused?

[@muhammadnaufil5237]

VBE is the forward biased diode voltage which is more or less constant all the time which is 0.7 volts

[@Hmi316]

Sir, if on increasing Vce, due to Early effect, emitter current (Ie) increases then shouldn't the forward biasing at EB junction increase and hence, knee or cut-in voltage decrease on increasing Vce? Could you please clarify this ?

[@UECAshutoshKumar]

Thank you sir ❤️

[@kisaflwr]

Thank you so much!!😃

[@mohamedosama597]

Sir how the transister produce ac current in Tesla coil( 2n2222) pls replay sir.

[@sabbavarapuchandrakala8513]

use the app (grammarly) for good english { then reply again } not transister =transistor and not replay = reply

[@King58468]

4:27 early effect

[@dishantdoshi2133]

Thanks alot sir💙

[@Lobiminyo]

Pls put the series resistance and derive the Ic using kvl and kcl .... that's the part i don't get in class

[@sidrakhalid9165]

Thanx♥️

[@shivangisharma8429]

thanks sir

[@himanshushekhardas1730]

Why penetration of depletion region is more in base region ?

[@harshitgupta5053]

because base region is lightly doped hence penetration is more in base region and less recombination will be taking place resulting in lesser base current

[@ashubabbar3322]

*Base is at lower potential and collector at higher potential* how? 4:50

[@amancasula9408]

Ashu Babbar it is in reverse bias. In which P(base) is connected to lower(negative) potential and N(collector) is connected to higher(possitive) potential.

[@culturechannel4613]

Usually Base Emitter Current is in microamperes!

[@yashaditya2107]

he has made that correctioin in the end

[@deependerchauhan-rg5jx]

sir why Vbe is not equal to Vbb

[@praveenchakravarthy1513]

Since base is small, a small amount of current is required to break the barrier. So base current should be in micro amperes, not milli...Sir, please change it!!

[@syedbahr4744]

You said ic is output current but here it is entering to collector????

[@hari8568]

How do we know that vce decreases when we go left of the input graph

[@uzairali6875]

what is difference b/w vbb,vbe and vcc,vce plz answer neso academy i,m cofused

[@sayansantra955]

vbb and vcc is more of a voltage source and vbe and vce is potential difference across base-emitter and collector-emitter respectively

[@TomThomasVempala]

@@sayansantra955 isnt it always 0.7 V ?

[@iiestphysics]

Vcc is used to reverse bais the collector emmiter junction

[@ricnjiiri]

Great work. Only the translation text though well intended is hinding the writting of the derivations. If someone had a challenge in hearing, they might not follow your explanation

[@swetashalini5739]

how this equation come?Vce=Vcb+Vbe

[@reemakumari6454]

The two diode connected back to back is "WRONG"..if we replace bjt with two diodes, we assume that there is no interaction between the two diodes expected they r far apart..however in a bjt, exactly the opposite is true for higher performance, The base region is made as short as possible and the two diodes cannot be treated as independent devices..

[@creative0402]

Sir isme Vbb not equal to Vbe or Vcenkt equal to Vcc

[@creative0402]

Kyu nhi h

[@dipalichitroda8205]

Please... Make a video on TRANSISTOR APPROXIMATIONs...

[@tarishisrivastava192]

Why is the base at lower potential?

[@tarishisrivastava192]

Can uh please provide the link?

[@asatyasree5037]

Because base is connected to ground

[@boggarapuaravind4299]

Super sir

[@RamKubde]

2024 anyone?

[@Zakaria_122]

5:10 it sounds like a bubble XD

[@souvikghata8297]

In common base, effective width (reduction in width) cause emitter current to increase (due to conc. Gradient) But, In common emitter, why don't effective width ( reduction of width) cause increase in Ib ( input current) to increase??

[@goutamsutradhar9566]

Coz in CB IE was output current

[@Vernacularpressact]

why is vce = vcb + vbe

[@Lucifer-1947]

Why V(BB) and V(CC) not used in common base transistor

[@Vernacularpressact]

theyre biasing potentials not input and output potentials

[@s_madhan623]

Base current is in microampere.

[@vineethambati1817]

Sir explain configurations of pnp

[@samuelatogyasiotabir9655]

God Nesco Academy

[@kandinaveen9333]

Super bro

[@nikhilshahare6241]

Sir the video is fabulous... But why the early effect has opposite result as that in common base... Why I(b) decrease here as the effect is same in both cases ?

[@AdityaFingerstyle]

In common base, the input current is the EMITTER CURRENT (Ie). Since the effective depletion width decrease, very few electrons from the emitter diffuses in the base and majority of them travels to the collector. After reaching the collector, the electron flows back to the emitter. If the effective depletion width was wider, more electrons from the emitter would recombine and lesser electrons would circulate in the circuit, hence less emitter current. Similarly, in the common emitter, the input current is the BASE CURRENT (Ib). Just as in the case of common base, the effective depletion width decreases, but this time we care about the amount of electrons that donot travel to the collector. Since most electrons passes through to the collector with the increase in output voltage, there's less base current.

[@iiestphysics]

0:48

[@PB_293]

Watching in 2021😃😃

[@akshayraina1298]

The base current should be in micro-amps!

[@electro-magnetik528]

why..?

[@alterguy4327]

Eureka✌

[@GurpreetSingh-yq8wu]

first you say if vbe increases ib decreases and then you plot the opposite

[@ankitbanerjee879]

He said when Vce increases Ib decreases ,bro

[@krishnamurari5553]

Sir pls make videos in Hindi also

[@sonushaik1218]

HAII sir Can you plz tell some slowly sir plz

[@shivamgautam8681]

no

[@janapatichinnavenkateswarl4939]

In ce there is no early concept

[@md.rubelrana2119]

Fine

[@Nur-zf2kl]

Diag.helpful

[@Bandhabi-u2l]

sound volume of videos is very insufficient

[@mohamedosama597]

This my great doubt in transistor...

[@adycerriteno3230]

how can depletion layer penetrate😠😠😠😠😈

[@mayankjoshi1502]

Base emiter junction is reversed biased instead of forward bias lol

[@kashiusofficial5179]

There's indonesian subtitle in this video, but am i the only Indonesian here?

[@akshinbarathi8914]

yes

[@nikhilshahare6241]

Please reply as soon as possible.. I m eager to know.

[@CM-hn6oc]

😘😘😘😘😘😘😘😘😘😘😘😘😘😎

[@inspector_Anil]

1st viewer

[@alterguy4327]

Anil kumar Congrats😅😅

[@naveenmondru5253]

graph iss wrong shold go to right not left

[@as72333]

he is decreasing the voltage and on decreasing the voltage current increases so it goes to left

[@sabbavarapuchandrakala8513]

first you need is graamerly appp