Silicon vs Silicon Carbide Transistors - Workbench Wednesdays

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element14 presents

element14 presents

Күн бұрын

Silicon Carbide transistors lower the cost of power converters in high-power applications of 25 kilowatts and higher. But how are Silicon and Silicon Carbide different? On Workbench Wednesdays, learn from James the differences between the two transistor types and some considerations for using them in a design. Also, see some simulation tools available from onsemi.
Discuss the episode, find the resources, and ask James questions on the element14 Community! bit.ly/3KGg2wm
The Elite Power Simulator tool from Onsemi: bit.ly/45ubLE1
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#0:00 Welcome to Workbench Wednesdays
#0:35 SiC Overview
#2:03 Si vs. SiC
#5:24 SiC Models and Simulations
#7:50 New Wavegen Features
#transistor #transistors #mosfet #siliconcarbide

Пікірлер: 16
@orthodoxNPC
@orthodoxNPC 10 ай бұрын
I wish every video in my feed was as useful as this video
@HillsWorkbench
@HillsWorkbench 10 ай бұрын
A lot of information presented quickly but clearly.
@didierbalocco1611
@didierbalocco1611 10 ай бұрын
Very good video and very well structured. Good Job. Thank for promoting onsemi great Elite Power Simulator with Model Generator.
@subdynoman
@subdynoman 10 ай бұрын
This is great news for the electronics world! I'm excited! I remember when Mosfets arrived. Gonna be nice to see cell phone sized power inverters and audio amps pushing more than their thermal dissipation capabilities.
@Musliperanto
@Musliperanto 10 ай бұрын
I wish my videos as brilliant as this video.
@jokervt000
@jokervt000 8 ай бұрын
Could you tell me the simulation / schematic tool you are using?
@TheBackyardChemist
@TheBackyardChemist 10 ай бұрын
How abot SiC vs. GaN?
@bald_engineer
@bald_engineer 10 ай бұрын
They tend to be found in different places in the power converter market. High-voltage/power tends to favor SiC while Lower-voltage tends to favor GaN. SiC has lower on-resistance compared to GaN, but GaN can operate at higher frequency than SiC. So for high power converters (10 kW and much higher) SiC is more favored for efficiency. But for low-power converters (think laptop/USB-C chargers) the higher-frequency capability of GaN means much smaller devices.
@DaveEtchells
@DaveEtchells 5 ай бұрын
@@bald_engineerExcellent summary, thanks!
@haveehere6651
@haveehere6651 10 ай бұрын
nice! Can you do a video showing the topology differences for rectifier applications in Hydrogen ?
@duyhai1869
@duyhai1869 10 ай бұрын
Great news for industry
@metallicsigma
@metallicsigma 25 күн бұрын
why you made gate between two source terminals?
@bald_engineer
@bald_engineer 24 күн бұрын
It is a cross section ...
@sotecluxan4221
@sotecluxan4221 10 ай бұрын
!
@MrNathanstenzel
@MrNathanstenzel 10 ай бұрын
Is this new or old information?
@MrNathanstenzel
@MrNathanstenzel 10 ай бұрын
Ah. It looks like there are recent advancements in gallium nitride and silicon carbide based chips.
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