The 2016 Nobel Prize in Physics - Professor Michael Fuhrer

The Nobel Prize in Physics for 2016 was awarded to David J. Thouless, F. Duncan M. Haldane and J. Michael Kosterlitz "for theoretical discoveries of topological phase transitions and topological phases of matter". In this colloquium I will try to explain the concept of a "topological phase of matter" and the impact of this idea on the study of electronic phases in solid-state systems. Before the work of Thouless, Haldane and Kosterlitz, phase transitions were understood within Landau's framework of an order parameter arising from the breaking of a symmetry; for example the paramagnet to ferromagnet transation breaks rotational symmetry and establishes an order parameter (the magnetisation). Thouless, Haldane and Kosterlitz (working independently or together in several different contexts) demonstrated that phase transitions may be accompanied by a change in the topology of a system, without a change in symmetry. This framework allowed understanding of finite-temperature transitions in low-dimensional superfluids (the Kosterlitz-Thouless transition), spin chains (Haldane), the quantum Hall effect (Thouless), and the possibility of quantum Hall effects without magnetic fields (Haldane). This last work was led ultimately to the discovery of a variety of topological phases of real solid-state materials which may form the basis of new types of electronic devices - which the FLEET Centre of Excellence is working to make a reality.

[@roberthuber2770]

What an incredible talk! Thank you!

[@anarchistalhazen7084]

Thanks for sharing this awesome Colloquium!

[@forevermusicinmyheart8975]

Thank you so much for this technical but also very approachable way of explaining!

[@sparshmishra97]

Amazing talk!

[@lisandrovenosta3865]

Excellent talk!

[@lattelab5040]

Nice physics, but not so sure about the electronic device. The minimum 2 terminal (contact) resistance of the topological FET is h/2e^2 = 12.9 kOhms corresponding to the two propagating modes. The allowed R_external from 2015 ITRS is ~200 Ohms/micron channel width. Low power drive current targets are ~1.5 mA/micron. 1D edge channels are not going to do the job for a FET. But gate controllable topology is very interesting.

[@SebastianWill]

Wonderful talk!

[@mappingtheshit]

If you have nothing to say, please save us from your waste shit

[@streamstriss]

7 years huh? I found this video just in time then.

[@sujithcooray3162]

Very helpful

[@zaidsserubogo261]

"Topological degrees of dynamical freedom as a function of space-time manifold, less that, you land in discontinueties and non smoothness which is topologically doomed

[@arrahman8818]

nice

[@mappingtheshit]

If you have nothing to say, please, shut the fuck up

[@TomAtkinson]

Mind = melted + spun squared

[@walterbishop3668]

His wife calls him my Fuhere :p

[@carsonhamilton]

uhh ....umm.....uhhh

[@lucamorieri1940]

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[@DIANNEELEE]

OK I'll bite and play stupid!!! HEIL . THAT'S AS BAD AS A FAMILY I ONCE KNEW NAME OF EICHMANN, AND IN AMERICA. AND THEY WERE GERMANS!!!😈😈😈????????????

[@fforfunforkids4461]

nice....can you send me this presentation on my gmail account plzzz

[@tomsmith6878]

yes

[@userjeffe]

Yes, I’ll send it right up your keister