sir i have a doubt regarding...at time 21:22 you said that its a p type semiconductor, then why are we not using the formula for the p-type i.e. -- Ei-Ef=kT ln(p/ni). sir please correct me
@bubunmazumder5 жыл бұрын
I know where's your problem,see if you apply "that formula" which you want to use then also you would have the same ans just by reversing its sign...try it
@Shudhdesivibes7 жыл бұрын
All your lectures are well explained and covering all the concepts helpful for making base of subject. Thnx u sir
@سعيدحميد-ذ3ذ3 жыл бұрын
estimate the resistivity of a silicon sample doped with phosphorus to a concentration of 10^15 cm^-3 and boron to concentration of 10^17 cm^-3 the electron mobility and hole mobility are 700 cm^2/VS and 300 cm^2/Vs respectively
@kiruthikaanbazhagan50047 жыл бұрын
sir in question 4 at 18:05 why we won't compare with the intrinsic si and p-type si?
@harshitagupta84116 жыл бұрын
Sir at 3:05 when we are provided with the acceptor ion concentration then why are we not calculating for the net Nd by subtracting Na
@UnacademyFlux6 жыл бұрын
Harshita Gupta not required it is approximately equal to Nd
@harshitagupta84116 жыл бұрын
Thanku sir for your video lectures they are helping me a lot during revision n d concepts are solid by through your explanations
@shivanandkambale6084 жыл бұрын
In single video ,u explained many concepts.thank u so much
@vasamsetti18014 жыл бұрын
Sir I have a doubt, in the last problem why we should not calculate for n = ni2 / p for conc. of donors added for p-type ?
@gauthambalu20713 жыл бұрын
Yes bro I'm also having the same doubt
@kamaleshwaran93305 жыл бұрын
Sir you have CBSE 12th physics lectures??
@berkayonayl21364 жыл бұрын
How can you find ni at 4.11 ?
@sajalgoyal23167 жыл бұрын
URGENT : when will you upload the remaining videos of ELECTRONIC DEVICES(which include PN junction and more) ??
@iamisro66367 жыл бұрын
who will consider the acceptor concent? As they too arent in negligible amount so due to appriciable amount of acceptor atoms , fermi level will move away of CB or a bit more towarda centre of forbidden gap ? I dont think its the right answer . Please correct me . Answer will be .04 eV lesser .
@UnacademyFlux7 жыл бұрын
can you tell at what time i need to look into
@anupagrawal68564 жыл бұрын
sir in the first question, why didn't we consider Na and found Nd=Nd-Na. In that way the answer is 0.420ev while your answer is 0.424ev. Is this much difference allowed?
@tbnelly57643 жыл бұрын
It's concentration not densities ig
@gnanaprakash24367 жыл бұрын
sir,i am following your lectures deeply thankful for all your efforts.
@viratramnayak70524 жыл бұрын
Sir this is enough for gate
@charleskafuluma19853 жыл бұрын
Thanks so much for this lecture
@pellurusaikrishna84547 жыл бұрын
Sir when u gonna explain A TO D CONVERTERS?
@tarun_kothuri3 жыл бұрын
A clear and perfect explanation! Watching after 4 years
@athiraps33904 жыл бұрын
Sir please upload engg mathematics luctures
@Satishkumar-rh2ir6 жыл бұрын
Sir sol. Of ln(Nc/Nd ) /ln(Nc/4Nd)
@omdarshanpaul5177 жыл бұрын
Sir please give next lecturs.....
@ramanjaneyulujagannadh26686 жыл бұрын
Sir my goal is IES . But I don't know the way of study for IES . would you please help me sir
@UnacademyFlux6 жыл бұрын
ramanjaneyulu jagannadh for IES you should know how to solve descriptive questions and general knowledge.. preparation should be like a gate..but you should learn more subjects in IES exam