very simple and perfect explanation we need these teacherss
@shanusingh985 жыл бұрын
gazab 6T SRAM, 3T DRAM, 1T DRAM covered my syllabus of gate(Semiconductor memories (digital electronics ece))............ thanks
@VishwanathgoudgOUD6 жыл бұрын
Thank you for your detailed Explination
@roopali33696 жыл бұрын
too cool bro..thank you ..i can write my internals now
@ayushgupta85172 жыл бұрын
Great explanation 💯
@PruthvikaR-t6m5 ай бұрын
Bro my exam is in 2 hrs u made this topic so simplified this helped me a lot thank u so much
@durgae21163 жыл бұрын
u jst saved my life.. ive exam tomorrow u explained my half of the syllabus in 15 min.... thanks a lot dude
@ChallaAakash3 жыл бұрын
Best channel simplified 🔥🔥🔥🔥🔥
@ashishagrawal22756 жыл бұрын
Thanks bro lec was awesome ur teaching is very good😎😎😎😍😍 thanks bro I was trying to understand this topic from hrs but not but from ur video I have understood thank u
@ShrenikJain6 жыл бұрын
ashish agrawal Welcome 😃 Share with your friends too 🙂😃
@anurondas38532 жыл бұрын
Instead of drawing the circuit before hand you should draw it while explaining the circuit. It helps in remembering it.
@mcxsaikumar99455 жыл бұрын
Good explanation bro,but can u plz tell me steps to design dynamic ram cell (like using 4,2 transistor) instead of 6T,1T.....
@vaibhavvalandikar39136 жыл бұрын
Thanks buddy 🙏🏻 .You again saved my ass,tomorrow in my vlsi exam Thanks a alot
@ShrenikJain6 жыл бұрын
Welcome 😃
@rahuljoshi83315 жыл бұрын
Today is mine vlsi exam.. hello senior 😅
@AbhishekSingh-gm6uv3 жыл бұрын
@@rahuljoshi8331 Tommorow is mine hello senior
@rahuljoshi83313 жыл бұрын
@@AbhishekSingh-gm6uv hahaha😂... Hello junior
@AbhishekSingh-gm6uv3 жыл бұрын
@@rahuljoshi8331 😂 apka toh btech khtam ho Gaya hoga?
@howzatbangladesh79272 жыл бұрын
Thank you brother from MIST
@tabishkhatib82647 ай бұрын
why would m1 need to be on... if it is already on due to word line being active 3:07
@varshagowda86942 жыл бұрын
Excellent sir
@nahiduzzamansojib30326 жыл бұрын
Can you explain the 4T DRAM using CMOS logic
@GaneshJadhav-us7zx5 жыл бұрын
Thanks! Ur a good teacher
@ayushbhujbal33058 ай бұрын
Thanks a lot bro 👊🏻
@chiragarora28276 жыл бұрын
Isn't the threshold voltage only applicable in Gate voltage? I've learnt something new but who knows if it's right or wrong?
@prithvishetty41716 жыл бұрын
No the same threshold voltage or pinch voltage applies for drain to source voltage too. Just look at the o/p characteristics of FET's
@yashgupta31276 жыл бұрын
It is applicable only in gate only but the thing is here it acted as pass transistor and it has a property that it will pass Vd as it is until it is less than Vgs-Vt If Vd is greater than that output will still be Vgs-Vt.I guess your preparing for gate you can refer that 2014 question on pass transistor 5V tha jisme sab gates pe
@yashgupta31276 жыл бұрын
@4:53 you said bit bar will be forced because of bit ,but as R=0 no current no voltage will be passed toh vo related kaise Hain??
@sarfarazahmedsuri5 жыл бұрын
6:15: why capacitor(c2) will discharge if m2 and m3 are in on state?
@VIJAYKUMARN125 жыл бұрын
There is a ground path created for C2 through M2-M3 (basically acting like switches), so if C2 is at a higher potential then it will discharge towards ground potential.
@deeptisingh6543 Жыл бұрын
thankyou so much!
@KamrulHasan-zg8ov4 жыл бұрын
It is an excellent explanation. Can you please upload the detailed explanation of 4T DRAM ?
@VIJAYKUMARN125 жыл бұрын
Excellent buddy!
@ShrenikJain5 жыл бұрын
Ty
@sahajapinky13855 жыл бұрын
thank you sir try to give how it is working on layout point of view also with complete architecture of dram please
@ShubhamGupta-qo3zb3 жыл бұрын
What is Vdd and Vtn
@shuvodev37086 жыл бұрын
Good Explanation
@ShrenikJain6 жыл бұрын
Ty 😄😊
@niharikamodi55404 жыл бұрын
Here in 3T DRAM for write operation you explained that X = Vdd - Vtn but why you didn't explain same thing for 1T DRAM? ... Am I missing something ? Why it is confusing me ?
@ttb1513 Жыл бұрын
You are correct. The same Vtn drop by an Nmos occurs in the dram access transistor. The word line can be boosted above Vdd, like to Vdd+Vtn, such that the full Vdd value from the bit line can be written to the capacitor.
@RAJU-ol7cp5 жыл бұрын
y u were not telling threshold concept in 1 transsistor DRAM?could u expalain that,if u know?
@bhagyalakshmis81926 жыл бұрын
well explained
@aviraldixit10115 жыл бұрын
Love you ♥️
@rahuljoshi83315 жыл бұрын
Awesome bro
@ShrenikJain5 жыл бұрын
:)
@freakvencyy25366 жыл бұрын
love you bro great tutorial helped a fucking lot
@ShrenikJain6 жыл бұрын
Ty 😄😊
@tusharikas54476 жыл бұрын
add videos on timinf diagrams of RAMs yaar
@ethanchen39986 жыл бұрын
Thank you very much sir for the video, how ever I dont understand why, in the write operation, M2 will be off? Isnt M2 determined by X's voltage?
@ethanchen39986 жыл бұрын
Another question is , If M2 is on, wouldnt M2 cause Cs to go to 1 since then Cs is connected to ground?
@OutOfRangeDE4 жыл бұрын
Yes in the writing op m2 is undetermined, or determined by the bit which was saved before. But because m3 is closed it doesnt really matter for x or Bit(inverted). Also there is another capacity between m2 and m3 (gate of m3) which has to be so small by layout config, that it doesnt matter.
@OutOfRangeDE4 жыл бұрын
@@ethanchen3998 2nd question: No its not connected to ground since Cs is connected to the gate of m2
@9bae3177 жыл бұрын
First 🔥🕺🏿🔥 - Sozo
@absolute___zero3 жыл бұрын
is 3t-DRAM cell patented? Do you have to pay royalties?
@pritamdss84807 жыл бұрын
Make some videos for ROM and RAM
@ShrenikJain7 жыл бұрын
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@ShrenikJain7 жыл бұрын
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@fadi52282 жыл бұрын
your bit lines should not be differential ! so it's BL1 and BL2
@amalkrishna92336 жыл бұрын
Thanks
@ShrenikJain6 жыл бұрын
welcome :)
@prajwalit97726 жыл бұрын
👍
@Tuftrodgamer2 жыл бұрын
please draw neatly
@ShrenikJain7 жыл бұрын
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