Power GaN technology for mainstream power conversion applications

For small or large high voltage power conversion applications, power GaN FET technology is making its way into providing the best efficiency and compactness of the solution sizes. Brave innovators are already adapting the power GaN as the key component for their applications and products are in the market already. This new disruptive technology with GaN HEMT(High Electron Mobility Transistors) in the heart of it offer fastest transition/switching capability (highest dv/dt and di/dt) brings the best efficiency. To complement the fast GaN devices with low inductance copper clipped package is the perfect combination to get the best out of it. Server, computing, industrial automation, Telecom infrastructure and automotive in all areas of power conversion power GaN FETs showing the best performance. In the volume cost performance spectrum power GaN FETs are now right at the top with Si based manufacturing infrastructure and larger diameter wafers (200mm). Power GaN FET products and manufacturing aggressively addressing the volume and cost to support the strong mainstream demand.
Dr. Dilder Chowdhury's presentation on the GaN-Day at Bodo’s 2022 WBG Event.
He is Director Strategic Marketing GaN at Nexperia.