Hi , Thanks for the video . I have a suggestion .. You can take an example values for mobility , Vgs and vt and explain the variations.. Understood that the squared dominance of overdrive voltage in the lower technology nodes , but what about the mobility? Even that decreases right? So i think it is important to explain with a simple example how the mobility decrease is still not mattering much and how overdrive voltage is compensating that.. Lets look at this example : First of all i would like to simplify the id equation id = mobility * ( Vgs- Vt) square [ remaining everything is constant value ] Now lets take some real time values : at 180 nm , T = 0 degrees , mobility (m) = 100 , Vgs = 3 V , Vt = 0.6 V , id = 100 * 2.4V * 2.4V = 576 mA at 180 nm , T = 100 degrees , mobility (m) = 10 (because of lattice scattering , m reduced at high temp) , Vgs = 3 V , Vt = 0.4 V , id = 10 * 2.6V * 2.6V = 67.6 mA at 7 nm , T = 0 degrees , mobility (m) = 100 , Vgs = 0.7 V , Vt = 0.3 V , id = 100 * 0.4V * 0.4V = 16 mA at 7 nm , T = 100 degrees , mobility (m) = 10 (because of lattice scattering , m reduced at high temp , this is applicable even at lower nodes) , Vgs = 0.7 V , Vt = 0.35 V , id = 10 * 0.35 * 0.35 = 1.225mA Now to summarize as temperature increases from 0 --> 100 degrees , at 180 nm , the current reduced from 576 ma --> 67 mA but at 7 nm , if we assume same reduction in mobility , current is still reducing with increased temperature , 16 mA --> 1.225 mA , which doesn't still explain temperature inversion. Now the question is , will the mobility reduces with temperature in lower nodes? If yes , then how do we explain the increase in current with increased temperature with the above example.. Thanks
@sakshiagarwal83453 жыл бұрын
brother I think Such extreme temperature variations are not being considered as it doesnt happen practically. I am not exactly aware of values but for smaller variation there must be some region where effect of Vt dependence on temperature must be exceeding mobility dependence on variation. She seems to be making short crisp videos keeping in mind the short span of attention of the average crowd today.
@SemiconductorDuniya3 жыл бұрын
can you mention here source of vt value you are considering at different technology nodes?
@crimsoncanvas513 жыл бұрын
There are other factors to be taken into consideration as tech-node decreases. 1) mobility becomes function of electric field due to which velocity saturation comes into effect. 2) mobility variation with doping. Additionally, (-3/2) factor changes. To put it simply, for lower nodes, Ids is proportional to W*Cox*(Vgs-Vt) *vsat. Thus, as temp falls, Vt increases and thus Ids decreases. Also, in your calculation, if at 0c , mobility is 100 then at 100c it will be 100*(273/373) ^(3/2) = 62 To put it simply,
@balajik12844 жыл бұрын
good one..
@vikineo4 жыл бұрын
There is a correction. The inversion is observed in lower technology node, yes, but also at lower voltages. Explanation: at higher voltages, vgs-vt is less sensitive to vt change, but at lower voltages it is more sensitive to vt change
@SemiconductorDuniya3 жыл бұрын
it is obvious that that at lower technology nodes, scaling of voltage will also be done when considering constant field scaling, so in a way, both are the same things.
@1o2m3k4j5 жыл бұрын
Does anyone know about temperature insertion for 12ffc. Will the device always be in temperature inversion for voltage range 0.72v to 0.99v and for both slow and fast process. That is will the device always become faster for all combination of voltage range 0.72v to 0.99v , and for both slow and fast process
@rohitkumarthakur27935 жыл бұрын
Can u make a video on LVF
@vashuyadav44035 жыл бұрын
Please make a video on Endcap cells and its applications.
@StayInBliss5 жыл бұрын
nice one
@backtobasics56025 жыл бұрын
Thanks :)
@pavankumarVilasagar5 жыл бұрын
Can you explain at electron level, why threshold voltage decreases with increase in temperature? How it affects the channel?
@AbubackerSiddiquehays5 жыл бұрын
Voltage threshold decreases when the temperature increases as more number of opposite carriers available to form a conducting channel. For example in case of NMOS, substrate is P type. If the temperature raises, that leads to the increase in the minority carriers which is an electron in this case. So, vt less than the usual value is required to form the channels. Thereby, cell delay decreases.
@pavankumarVilasagar5 жыл бұрын
@@AbubackerSiddiquehays Thank you
@swastik47613 жыл бұрын
Do you also have complete courses on Udemy ? Just like Kunal
@backtobasics56023 жыл бұрын
No.. I don't have full courses.
@swastik47613 жыл бұрын
@@backtobasics5602 Heres my suggestion......U should prepare courses on udemy. KZbin is good. Udemy is awesome with respect to skills
@backtobasics56023 жыл бұрын
Thanks for your suggestion. Sure, will explore udemy as well :)
@swastik47613 жыл бұрын
@@backtobasics5602 Also you will generate much more monetary profit, bcoz udemy deals with enrollment, like during sales...its like 380 rupees per course per user....out of which 50% to 60% is shared to the content creator. Also I see, its like thousands of student take courses, if content is good. And yours too good. Also students will receive certification of your courses which serious students can add in their resume. You will develop your brand as well.
@swastik47613 жыл бұрын
Meanwhile, you can keep adding free videos here too, to help students clear basics, but if someone like me have to refer systematic courses without advertisements and other youtube distractions, we can refer it on udemy.
@sandeepreddymuli5855 жыл бұрын
Topic is not clear, you skipped the point when temperature decrease the how mobility decrease
@Neel_Doshi3 жыл бұрын
Yeah, she should also explain why we all exist, why this universe was created , why big bang happened. Why time exists..does it?.