V-I Characteristics of PN Junction Diode

Analog Electronics: V-I Characteristics of PN Junction Diode
Topics Covered:
1. Volt-ampere characteristics of diode in forward bias condition.
2. Volt-ampere characteristics of diode in reverse bias condition.
3. Breakdown voltage or Zener voltage.
4. Cause of breakdown.
5. Peak Inverse Voltage (PIV).
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[@kirillkotyagin]

Pardon me for being pedantic, but the reverse breakdown phenomena that you’ve described is caused by the avalanche breakdown, not zener breakdown. Thus the avalanche voltage, not zener voltage. The zener breakdown is a different physical phenomena that occurres not due to ionization, but due to quantum tunneling of electrons via the potential barrier that is higher in energy than the energy of electrons. To be fair, these two breakdown types get mixed up a lot, but still these are two different phenomenas, both of which may take place in semiconductors under various circumstances. Anyway, your lessons are really great, thank you very much for sharing them.

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[@AnkitYadav-df3fi]

The breakdown of covalent bond through collision with energetic electron called avalanche not zener breakdown. Zener breakdown is case of direct rapture of bonds by electric field of junction.

[@info-hub457]

Isn't it the same thing

[@abhishekchoudhury5421]

Very nicely explained sir. It definitely clears all the concepts. Thank you sir

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Itna achá koi ni samjha sakta Sir

[@abdullahqayyum4917]

Thank you for this platform. Learnt a lot from your lectures. The correct term that should be used at 8:28 is voltage. If we keep on increasing voltage the current will not change...

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A gentleman never writes down his definitions.

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[@aqeelalmousawi1500]

Very clear and thorough, thank you.

[@Ebuilt]

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[@satvika7819]

Draw and explain forward and reverse biased V-1 characteristics of PN junction diode.

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Very nice explanation

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[@PawanPrakashTirkey]

Very Well explained!. thank u so much. What are the application of Reverse Bias. Is it significant ? Note: Knee Voltage has not been explained.

[@mohaimentawsif]

Knee voltage is VB.

[@ankitabiswas1188]

@@mohaimentawsif there's a specific value of Vd . Tht us called knee voltage.. Voltage when sudden increase of current is observed

[@azmainfaiak8111]

@@ankitabiswas1188 is that not barrier potential

[@shrushtit4139]

It was very helpful . Thank you!

[@JKKLSHH]

how can use ADS varactor reverse current volt-ampere characteristic curve?

[@Ram..866]

Tq

[@grandson_f_phixis9480]

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[@aiswaryasabu7738]

Sir can you please explain why the graph in forward bias region shifts towards left when temperature is increased?

[@alterguy4327]

THanks☺

[@constructofeternity]

Wasn't what we are explained Avalanche Breakdown(As in except the High Doping,Which is true for Zener Diode!).

[@shivasaigundoji1003]

Yes!

[@dayakardasoju1474]

Thank u

[@khitabgul8969]

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[@ramjikolappanv6693]

Why the forward curves comes next one-by-one along right-side direction when constant voltage kept different in transistor.

[@pahadi3530]

thnx

[@imhotepchannel6846]

Great explanation! Which book do you use sir?

[@chandrasekharyadav2151]

Why we don't perform reverse bias for silicon diode in lab

[@hadiaamin1466]

Does the equation for diode current Id stand when the diode enters the breakdown region?

[@gurunarendravarra8706]

How to find dynamic resistance using i-v characteristics of diode

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Sir, Can you please elaborate why the diode current is in exponential form?

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[@hamzaahmad4345]

why the forward current is not parallel to the positive y axis please reply

[@anirudhnarva3141]

the word drift comes into the game when electric field is applied (as drift velocity proportional to electric field) in case of forward bias condition after barrier potential becomes equal to biasing potential the depletion layer vanishes therefore conductivity of minority charge carriers becomes zero ( I-saturation = 0 ) but according to current equation of diode id becomes zero because of Is but we see exponential rise in it how ????????????????????????????

[@michaelbradley7621]

Is this current in the forward bias region primarily a diffusion current or a drift current due to the field?

[@aswathi8872]

What is cutin voltage

[@basitusman380]

i a, sorry but you have mixed avalanche breakdown with Zener breakdown. please clarify

[@kunalaggarwal1928]

How come the the reverse saturation current is same for germanium and silicon ? it is in nano amperes for si and micro ampere range for ge, kindly reply

[@krithirauv-xs8vn]

Sir..! Can we write this as an answer for the v-I characteristics of pn junction diode???

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🔥🔥🔥

[@abhirupkabiraj]

What if we dope the diode heavily. Would that reduce the knee voltage (Vd)?

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[@chiranjivrao6060]

from which book u get this vast amount of knowledge on semiconductor

[@rahulchaudhary472]

What is the equation for I (majority).

[@farhanakcent1454]

If any body asking

[@ec-051pradeep2]

Why the voltage remains constant even we increase the external voltage

[@mohitjarwal8603]

What is the difference between breakdown voltage and peak inverse voltage.

[@joeljoseph6435]

Are you using Boylestad for reference ?

[@sunil_18]

No

[@amitgautam6087]

what is the breakdown voltage for simple pn junction diode in reverse bias

[@nikitamakeev7201]

Depends on concentrations and type of semiconductor. It is an ajustable parameter

[@MuhammadShahzad-ni1ix]

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[@bickyou4696]

I have a question. How the saturation current is called 'saturation ' ?

[@kshitijdwivedi1]

because on further increment of voltage there will be no change in current.

[@ashubabbar3322]

sir which is a better material for making a diode ge or si

[@imranhussain_96]

Silicon is better semiconductor because germanium is temperature sensitive.

[@ahmetyusufsalim]

It depends on where we will use it.Temprature sensitivity is just one of lots of parameter.Why silicon is more commonly used is all about economics.Germanium is more expnesive than silicon however for some particular areas germanium need to be used nevertheless first transistor was made of germanium in Bell Labs in 1947.

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[@pardeepverma1994]

Can anyone explain how reverse saturation current is constant concept wise not formulated? It must inc. with rev. Voltage bec. Drift current is inc. compare to diffusion current. If we take nmbr of minority carriers fix then it must dec. with time as there conc. Continuesly decresing. How it is constant with time and voltage inc.

[@pardeepverma1994]

Note- i’m not discussing temp. Effect here

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What is Vt?

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thermal voltage due to tempreture

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9:44

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[@baikannikitha1897]

Very useful lecture. Thank you very much.