Sir, You explained in gentle manner and the subject which you delivered is easily understandable ... Really yours is Excellent Work. Thank you.!!
@analoglayout6 жыл бұрын
Ur welcome , thx for the support
@mohammedafzal5346 жыл бұрын
Very well said! Good one upload more & more videos
@Nandhakumar.9229 Жыл бұрын
Thank u sir for giving access to the pdf
@sivaparvathi8146 жыл бұрын
very good explanation. thank u
@shivagansham89584 жыл бұрын
Hi Sir, your explanation is really nice, one question, why do we some time add multiple antenna diodes on a singe net to fix the antenna effect.
@analoglayout4 жыл бұрын
Once your layout is done , you have find a optimal place to keep diode , just think about collateral DRC and LVS issues , it's not so easy to modify your layout .... So u need time
@nagoorshaik162710 ай бұрын
hi , once the diode is in reverse breakdown region to discharge charges then will return to normal reverse bias region or not ? because if it is in breakdown how it will avoid discharging of actual signal even if temperature changes as you said operating temperatures and fabrication temperatures. can you please make one video or comment on this?
@rameshrammi24832 жыл бұрын
Will that physical connection of reverse break down n-diode will present after fabrication?. If present, will that not impact normal operation?
@manojgutha56865 жыл бұрын
You mentioned at 2500v reverse bias diode will work...but in that case at higher voltages metel may melts right??
@analoglayout5 жыл бұрын
At the time of fabrication , all the device's and metal will be at almost 1400 to 2700°c , so all the device's are thermally unstable , so we don't want huge reverse breakdown voltage , even Little voltage will break the junction ....
@manojgutha56865 жыл бұрын
@@analoglayout thank you, one more question ,how much positive voltage will accumulate during plasma etching and what is range of reverse breakdown voltage for diode we were using??
@analoglayout5 жыл бұрын
We cannot calculate , exactly how much will generate .... When device is in particular range of temperature we can define reverse breakdown voltage , if the device is in too much high temperature even small voltage can break the reverse junction
@manojgutha56865 жыл бұрын
@@analoglayout thanks for replying....I watched plasma etching video also but I didn't get why only positive charge is accumulates on metal during etching process even though plasma is neutral???? Someone asked the same question and you suggest to watch the plasma video and I watched but sorry I didn't get....can you please give me answer?
@analoglayout5 жыл бұрын
I said positively charged ions , not positive charges .... In side plasma both +ve - ve charges will be there
@user-ep4hz6nq5y4 жыл бұрын
But for pn junction diode if the reverse voltage reaches the reverse breakdown voltage , the diode gets damaged. Then how we can we use pn junction diode?? Are antenna diodes and normal pn junction diode same ???
@analoglayout4 жыл бұрын
It's a normal on junction diode , and even if it's damaged during fab , that will not affect out original chip functionality , this will protect out chip from antenna problem during chip fabrication time
@user-ep4hz6nq5y4 жыл бұрын
@@analoglayout Ok Sir ,Thanks a lot
@harshakanamarlapudi16814 жыл бұрын
Can we use mos diode also to avoid antenna effect?
@analoglayout4 жыл бұрын
No , antenna diodes are different from typical diode
@himanshupatra19916 ай бұрын
@@analoglayout So, what are the types of antenna diode? any documentation of NAC/GNACs?
@mounimounika1876 Жыл бұрын
Sir stick diagram and netlist formation video cheyandi sir
@SrinivasSatti-g4q Жыл бұрын
why we always take reverse bias in antenna insertion
@ramakrishnamannam27305 жыл бұрын
sir how charges will accumulate while doing etching please tell me sir
@analoglayout5 жыл бұрын
Pls watch dry etching video or plasma etching video in our chennal
@suresh65186 жыл бұрын
Thank u sir
@shrikantbp6 жыл бұрын
hi How can you say after plasma etching the chargers are positive only ???
@analoglayout6 жыл бұрын
Positively charged ion
@analoglayout6 жыл бұрын
Watch plasma video once , u will understand , simply don't ask questions without watching full or proper videos
@Tanmoy1015 жыл бұрын
The reason is simple. In simple words, the surface where manufacture processes take place is grounded. There is no power terminal. Hence, during etching only positive charge is formed in long routes due to the property of "static electricity".
@manojgutha56865 жыл бұрын
@@analoglayout please share the link here about plasma video
@prabhutechnologiechannel63243 жыл бұрын
Please explain me 2nd order effects
@mrx540004 жыл бұрын
what about pmos??
@analoglayout4 жыл бұрын
Both mos have antenna effect , n diode u can use for both mosfer , just change the connection
@avinashpurohit74016 жыл бұрын
Thanks Sir
@ramakrishnamannam27305 жыл бұрын
how to calculate Antenna ratio in practically
@musclepedia1236 жыл бұрын
If you don't understand my comment then you don't understand what iam trying to tell
@musclepedia1236 жыл бұрын
Not so useful..
@analoglayout6 жыл бұрын
if ur not able to understand this , ur not fit for vlsi industry , musically kiddos ... thx for ur valuable comment
@saravanakumara80806 жыл бұрын
Which field are u working? If u are IT u can not get this concept. The way he explains superb