Electronic Devices: Carrier concentration calculations

[@سعيدحميد-ذ3ذ]

estimate the resistivity of a silicon sample doped with phosphorus to a concentration of 10^15 cm^-3 and boron to concentration of 10^17 cm^-3 the electron mobility and hole mobility are 700 cm^2/VS and 300 cm^2/Vs respectively

[@Eld0g5]

what happens to p and n when ni>>ND or NA ?

[@VigneshD25]

it becomes an intrinsic semiconductor

[@abhilashvadali457]

@@VigneshD25 how can u relate ni with na and nd? ni is concetration of charge in intrensic and na and nd are energy levels.🤦🏻‍♂️

[@VigneshD25]

Nd and Na are dopant concentration in N type and P type semiconductor. Not energy levels.

[@abhilashvadali457]

@@VigneshD25 ok thanks

[@abhilashvadali457]

@@VigneshD25 yaaah I got it thanks

[@tamaldatta8520]

But in case of n type concentration of acceptor should be zero ??? i.e. N_a = 0. Isn't it ???

[@shubhnamdev5265]

how can u say that Nd >> ni .. any explanation

[@nithinmanepalli2772]

generally we use Nd>>ni else there is no point of doping . like it not at all useful if nd is comparable to ni

[@surajkulal692]

for intrinsic gallium arsenide, the room temperature electrical conductivity is 10-6 (ωm)-1; the electron and hole mobilities are 0.85 and 0.04 m2/vs respectively. compute the intrinsic carrier 2/vs respectively. compute the intrinsic carrier concentration ni at room temperature.

[@surajkulal692]

Sir please solve this and make video step by step