Electronic Devices: MOS Capacitor (04) - Depletion Mode

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techgurukula

techgurukula

Күн бұрын

Пікірлер: 20
@tushargarg1106
@tushargarg1106 2 жыл бұрын
These lectures are too good.
@EigenA
@EigenA 4 жыл бұрын
Definitely earned a sub. Thanks for the content.
@RekhaSingh-uh5oc
@RekhaSingh-uh5oc 10 күн бұрын
Psi S is same as Built in potential Vbi??
@georgevendras5450
@georgevendras5450 5 жыл бұрын
Hi there. Can someone tell me how the formula "Q' = q*N_A*x_d/ε_si" is extracted and what exactly represents (I think it represents something like Q/A = Voltage*ε_si/x, that is, capacitance formula combinatrix, but not sure) ? Thank you!
@oogway5472
@oogway5472 10 ай бұрын
Sir why is Qs constant in semiconductor for distance xd and not like the one you taught in accumulation mode?
@mdkalimullah4207
@mdkalimullah4207 5 жыл бұрын
Outstanding
@mrigankomandal710
@mrigankomandal710 5 жыл бұрын
The phenomenon of charge inducing should be same for both depletion and accumulation(except for one pull the e and one pushes). The doubt sir is, you showed a gradual decrease in charge distribution and E.field for accumulation mode, but here you are showing sharp edges for charge distribution , and e field is linear here , in accumulation mode it was not. Can you please tell why?
@captainstreamer3261
@captainstreamer3261 Жыл бұрын
the words itself your answer " Depletion " what you mean with " Depletion " ?? And " Accumulation " ??
@TelTrak
@TelTrak 5 жыл бұрын
Very good explanation. A minor comment... the formula for E=∫ρ/e dx doesn't support the step change in E field at the oxide semiconductor interface. I think the epsilon (permittivity) has to come outside the integral - then it would fit with the step change in E. I know the step change in E field at that interface is correct as you show - just that formula as shown unsettled me as it doesn't fit here due to the change in permittivity at the interface.
@electricalnguyen
@electricalnguyen 2 жыл бұрын
Hello, could you please explain why epsi_ox E_ox (D1)= epsi_si E_si (D2) at the Si-SiO2 interface? Because the boundary condition said that D1 - D2 = surface charge density (on the right side, we have negative ion right?)
@captainstreamer3261
@captainstreamer3261 Жыл бұрын
Where is the charges located in surface? , inside Surface Of SiO2 Or Outside Surface Of SiO2 , what would you think ?
@electricalnguyen
@electricalnguyen Жыл бұрын
​@@captainstreamer3261 what do you mean "in" the surface?! btw, thanks. As I understand now, surface charge means that the charge is right "at" the SiO2 surface. It is from the point of SiO2 view. --> Zero charge How about from the point of Si view?
@fathysayed1670
@fathysayed1670 4 жыл бұрын
thank you legend
@galelbaz2149
@galelbaz2149 4 жыл бұрын
thank you so much
@mdkalimullah4207
@mdkalimullah4207 5 жыл бұрын
Hello sir please upload video on communication systems autocorrelation function
@youcefai619
@youcefai619 5 жыл бұрын
i think u mixed between accumulation and depletion diagrams i searched about it i foubd that u reverse them , confirm them plz sir
@techgurukula
@techgurukula 5 жыл бұрын
It's not mixed up. This is correct. Let me know where you found reverse.
@mohitrongare4033
@mohitrongare4033 5 жыл бұрын
They are correct Joseph Ganja marke dekhe Kay bhai videos🌬🌬🌬
@captainstreamer3261
@captainstreamer3261 Жыл бұрын
na na bhai wo N type Substrate Ka video Dekh ke aya , abhi kya hain ki .. sab lok toh likhte nehi na ki konse substrate ka video dikha rahe , toh confuse ho gya bechara...
@xyzme1217
@xyzme1217 5 ай бұрын
Thank you so much
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