Electronic Devices: MOS Capacitor (07) - CV characteristics

MOS Capacitor (MOSCAP) CV characteristics are discussed in detail.
In all Modes of operation: Accumulation, Depletion and Inversion Mode
Including Low and High Frequency characteristics

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[@kavishkabartlett4261]

for high frequency, the depletion width is increasing, so why is the capacitance just Cdep, max? why is not like in depletion mode where its dependent on the depletion width length, which in the case of high frequency, is bigger than xd max.

[@shubhamsatle1581]

excellent sir

[@asrithperuri629]

how you wrote the depletion capacitance as e(si)/x(d) delta q and delta(- q) are separated by distance by x(d)+t(ox)

[@pavithraksc8311]

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[@mohitrongare4033]

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[@mohithvepa3118]

is it the same for PMOS CAP too?

[@vijayrajchoudhary5206]

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[@moneerkutt1228]

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Thanx u

[@n33l85]

Doubt: if we increase the delta v very fast wouldn't it be low frequency??

[@lateshsharma2820]

From where we refer the written material ... Or book

[@MohamedAbM]

Can you please explain sheet of charge approximation? Thanks

[@electronicswithmadhan1052]

Sir what's the difference between strong and weak inversion.... whether the weak inversion occurs during the depletion region formation itself sir....

[@gokhansert4122]

How can we plot Vgs/Cgs in PSpice?

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[@Abhishek_-dd5gk]

doubt 😕 at 15:00 C'dep(xd,max), [xd,max is the previous xd,max] or [ xd,max after adding 🔺Q charge on depletion region] if 🔺Q charge is adding on depletion region then depletion width should be increased so xd,max should be increased, so at 15:00 ,{ Is xd,max is new xd,max }

[@sabharishsasuke]

Sir, In inversion mode, why are we not considering €si? There is depletion region charge for width Xdt.

[@siddharthapaul7963]

The "capacitive action" after inversion happens only on the metal-oxide surface and the oxide-silicon surface. You can see that any delta Vg after inversion is accumulating NET CHARGE on the surface of the metal-oxide and oxide-silicon layers only, separated at a distance of tox. The depletion capacitance is not a "capacitance" anymore after inversion because there is no net charge accumulating on both surfaces of the depletion layer (the two surfaces namely being the oxide-silicon surface and the right side of the depletion layer) for any delta Vg. Hope it helps. Cheers!

[@poppyflorist]

This is confusing. Why does in accumulation q gets deposited at interface, while in depletion mode it cant and then in inversion mode, with depletion layer it can? Why would there be thermal generation when theres no heat for inversion to happen from within the depletion layer? And for inversion, if q gets deposited on the metal and semiconductor interface, why wouldn't Cox change? C=q/v, q changes there.

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[@shivashankar3234]

Hi