Well Proximity Effect - English Version

[@tamilabhivlog9473]

Thanks naba, never forget WPE in my life

[@pradeepcb8209]

Thank you bro...Its in need for all guys who r really preparing for interview and also working guys will be not knowing about the concept's.

[@analoglayout]

thx for ur comment

[@nishithnibrash2473]

Thank you. It was impeccable.

[@Everydaykaen]

Nice for my interview next week 😅

[@sanjaytumati]

When you say stress around 5:30, do you mean mechanical stress? How is mechanical stress caused by excess ions? I can see how excess ions change the doping of the S/D regions in the transistor and change its Vt/mobility etc. But how does it cause mechanical stress? Thanks

[@kashinaths1994]

Really it's helpful for me thank you 😊

[@ayeshafarheen9559]

Thank you sir. Very useful

[@harinarayan7003]

nice one👏

[@manishasutar8701]

if photoresistor is scattering my ions then why we will not remove that before ion implantation? basically below that one oxide layer is present to select particular area for ion implantation

[@kshitijsingh636]

nicely explained ...thanks

[@hamzaatiq203]

can we simulate this effect?

[@analoglayout]

Yes you can

[@ayeshafarheen9559]

For which layer are we doing ion implantation

[@analoglayout]

Source & drain

[@suryaprabhakarthota1182]

Super explanation sir

[@siddeshbagali13]

Please add and explain some more concepts, very helpful source

[@dosapatikrishnakumar6569]

Hi . You said ion implantation done with 7 degree angle.. then both edges will effect.. but if we done with 90 degrees then there is no chance to hit the edges then there is no chance to WPE? WHY we not do with 90 degrees ion implantation? If do what happened?

[@analoglayout]

90 degree implantation also will give other problems , so after doing many research they found , 7 degree implantation is better then others , but its having only one problem WEP , so they are following that

[@dosapatikrishnakumar6569]

@@analoglayout k but I heard for source and drain also we do 7 degrees.. depth of the well is high compare to source and drain regions.. how control depth.. ?

[@dosapatikrishnakumar6569]

Bro what are the problems.. using 90 degrees ? If not possible to share here then mail me.. thanks

[@analoglayout]

read , art of analog layout ... book . . . .

[@yuvrajsingh-oy7op]

@@dosapatikrishnakumar6569 See if ion implantation is done at 90 degree angle, a issue will comeup known as Channeling effect (penetration of ions to undesired depths), so they tilt the beam 7-9 degrees to overcome this effect. if you want to study in details go through art of analog layout by Alan Hastings.

[@ismartjayam]

sir will u plz upload SHALLOW TRENCH ISOLATION AND DEEP N-WELL

[@analoglayout]

venkat , i've few doubts in this 2 topic's , so it will take time , i know the concepts , but i've make understood that to everyone , so i need time , sorry for the delay

[@gowri1881]

How does effect is only on sides? It can be on all sides also?

[@analoglayout]

All the sides

[@bipulpal7719]

nice ....thank you.... want video on short channel effects

[@analoglayout]

already WPE , i posted , STI , LOD , is left .... as soon il post

[@manojsremark4436]

@@analoglayout what is purpose of ion implanation process & why??, and why ion implanatation is doing in only 7 degree angle??

[@mohammedafzal534]

Can u pls list the second order effects? Whether we have 1st order too in analog layout?

[@analoglayout]

WPE,LOD , STI ,DIBL , this topic is 2nd order , i will try to post asap

[@mahendarkodimella323]

Plz upload video on electro static discharge

[@analoglayout]

ESD will be available soon

[@sampathkumarmatlapudi8250]

its vary the vt of the n mos or not

[@analoglayout]

it will vary the vt , for all mos

[@sampathkumarmatlapudi8250]

but in video u are mentioned only pmos only thats why im asking

[@analoglayout]

for easy drawing , i chosen nmos , wpe will affect all the device which s near by well boundary , i.e nmos , pmos , resister , capacitor , all the active and passive devices

[@suryanarayan2406]

Hi... if you observe the diagram you are doing ion implantation with an angle right, in that scenario the transistor which are placed left corner side only affected.. how will the right corner transistor affected?

[@analoglayout]

ion implantation done by 7 degree angle , so both corner will be affected , i cant able to draw exact diagram ,

[@mohammadaslamalam5413]

Is WPE also will effect NMOSES if it places near to WELL ?

[@analoglayout]

Ys

[@swathikilaru2082]

Hi sir, How Vt will change -10% based on scattered ions can you please explain

[@analoglayout]

Vt variations will be thr , for ex 10% , it may even more High or low , it's just a random %

[@borncreative671]

sir make a video on ESD

[@analoglayout]

Sure ... I'll do

[@jathinc2230]

WILL THE Vth OF MY MOSFET DEPENDS ON TRANSISTOR WIDTH AND LENGTH?

[@analoglayout]

VT depand on , so many things . L , W , poly resistance , cgb , doping on poly , etc

[@gangavarampavan9437]

can you please upload videos on internal structure of end cap cells,tap cells, decap cells

[@analoglayout]

Lemme try , if available

[@pranalijadhav7774]

Can you please explain in detail how VT of the transistor varies?

[@analoglayout]

watch body bios video , u will get some idea

[@pranalijadhav7774]

@@analoglayout OK. Thank u

[@analoglayout]

your welcome

[@rajasekharreddy6891]

Sir plzzz upload more related to layout sire

[@sahajapinky1385]

hi sir if you don't mind can you please explain deep nwell process also

[@analoglayout]

IL do that

[@Rebecca_eenagaraniki_emaindi]

Can you please tell me in detailed how the scattered ions are affecting the nearby device in terms of charge carries.

[@sanjaytumati]

The ions are what is causing the Doping of either the substrate or the Source/Drain diffusion. If not for WPE, the doping would be uniform. What scattered ions are doing is causing non-uniformity in the doping which affects the specifications (Vt, KP) of the transistor sections that are too close to the well.

[@youthcentral493]

cmos fabracation vanum sir

[@analoglayout]

next video is ur video only bro ... im working on it

[@bhavanireddy1152]

explain in cross section view ........