Lecture 34 (CHE 323) Etch, part 1

[@pudgywudgy7111]

Watching this on 1.25 speed was excellent. Barely had to pause or playback the video. No fluff.. just good learning. Thank you.

[@ChrisMack]

PDF copies of all the slides in this course are available at: www.lithoguru.com/scientist/CHE323/course.html

[@mohammadrashidi6214]

Thank you very much. Your tutorial videos are so useful.

[@susmitaganguly1760]

The lectures are so good. By the meantime I got some questions: 1. Why you don't want H in the RIE process? 2. What causes etched features at one edge of the wafer to have higher etch rates? 3. What causes the overall wafer-scale etch rate variation pattern observed in wafers?

[@ChrisMack]

1. I'm not sure I uderstand the question. Sometime you do want H (hydrogen) in the RIE process. 2&3. Across-wafer nonuniformity of etch rate is mostly due to nonuniformity is plasma properties in the etch chamber, which in turn is a function of gas flow uniformity and the ability to deliver power uniformly to that gas.

[@ndjarnag]

outstanding!

[@信成陳-g1z]

ers