Prevention of Latch-up - English Version

[@analoglayout]

in this video 4.33 Min , i said Guard ring have via , pls correct it by "guard ring have contact" so multiple contact will reduce R , My apologize for this Mistake

[@raviraju1450]

No apology require sir...❤

[@sireeshakosanam5522]

According to my knowledge well contacts is nothing but guardrings??

[@roshanmg8800]

Hey, thanks for your video.. but few of your comments regarding beta value, epitaxy layer are inappropriate.

[@analoglayout]

Pls , comment your answers , so that other also can understand that

[@avinashpurohit7401]

what is use of double gaudring in latchup?

[@analoglayout]

some times , we dont want any unwanted signal , so double guard ring we use , to attract minority & majority carrier (Noise signal)

[@pankajbaghmar7459]

Very well explained. Thanks

[@veenabenturs.b.bentur2486]

If we increase n-well area ....will it reduces the possibility of latch up?

[@analoglayout]

if u increasing area , beta value of resister may change , so thr will be 50 : 50 chance to avoid latch up

[@RamaKrishna-cb3yd]

Bro how to reduce substrate resistance in LATCHUP

[@analoglayout]

By adding guard ring

[@RamaKrishna-cb3yd]

How to reduce guard rings

[@analoglayout]

Why do you want to reduce the guard ring ? Post your questions properly so that i can understand & reply. Don't expect straight forward answers better you can read and spend time with the text books.

[@rabbanishaik1033]

In analog layout ,CMOS have pmos and nmos ,where as nmos have positive voltage but pmos have negative voltage, in my digital world I have 0 to 5 volts only ,what about negative voltage,how it will come and how pmos will works.

[@analoglayout]

0 is native stage , 5v is a positive 1 stage

[@vikramyogan2501]

How beeta and resistivity are related?

[@sharathseshadri3698]

beta is the current gain of npn/pnp beeta = ic/ie

[@meghanabuppin2984]

In a nmos majority carriers are holes(substrate is of ptype)and minority carriers are electrons vise versa in case of pmos. But in the video it is vise versa can you explain that?

[@mindstreamx]

Did you mean Deep Trench Isolation?. We usually refer to Shallow Trench Isolation as STI which is anyways done between devices now if i am not wrong

[@vickykale8104]

I m not getting via reduce resistivity ,and latchup is happened because of low resistance path

[@analoglayout]

latchup will trigger due to beta value , this beta value based on substrate resistance , so just thing if u increase the area by adding tapcell or guard ring , so resistance will reduce , if R reduced beta value will reduce , if beta reduce latchup will not trigger , if u want more details refer any stranded author books

[@mamatapatil9519]

Hi, In guardring is consists of contacts not vias. but vias and contacts are uses for connectivty purpose how vias and contacts will reduce the substrate resistivity can you explain in detail?

[@analoglayout]

Can you pls tell me what's the difference between via & contact ?

[@meseretmisganaw6666]

nice how to write in proposal form?

[@analoglayout]

What kind of proposal ? Form

[@Rebecca_eenagaraniki_emaindi]

What is the relation between Resistivity and Beeta

[@analoglayout]

its a define total R value

[@dheerajswaroopsm691]

As per my knowledge expitaxial layer is lightly doped.

[@analoglayout]

Let it be , if you have references book kindly share, il also study that

[@pinkishrivas4882]

is any relation of antenna effect in vlsi design to Antenna??

[@analoglayout]

Ofcourse we have , this will damage the devices permanently while fabricating

[@StayInBliss]

love it

[@sharathseshadri3698]

SOI process will not have latch up

[@analoglayout]

There is no such information available in soi process

[@sharathseshadri3698]

@@analoglayout in FDSOI process by IBM there is BOX layer over the substrate & devices are fabricated over it , so that there is no latchup