Professor, you can't possibly know how much I have learned from your class even after having done a lot of this type of work for almost 40 years. Thank You!
@wagsman9999Ай бұрын
Everything is explained so clearly. Master teacher.
@bassamsleiman-i5q4 ай бұрын
greetings and special thanks from lebanon .. master 2 in microwave engineering physics
@prasantnair15905 жыл бұрын
Top class teaching, I loved it.
@Sourav_Soumyajit2 жыл бұрын
Superb explanation!
@stefano.a Жыл бұрын
51:33 If the voltage on the drain is equal to the one of the gate, what value we have to select for RF? Thank you.
@electronics_enthusiast5 ай бұрын
More importantly, if there is no current flowing through Rf, then why do we need that resistor in first place. If drain and gate are supposed to be equal, then just short circuit them with a wire
@alirostami944710 жыл бұрын
thank you very much
@shanthoshkumarm68735 жыл бұрын
in 48:51 why no current flows through gate ?
@amitjangra68334 жыл бұрын
due to the SiO2 layer current will not pass through the Gate of MOS at low frequency.
@baalakrishhnach35744 жыл бұрын
As the MOS device to be in saturation Vds should be always greater than Vgs by one threshold. But at 52:00 we see that in self biased CS stage drain and gate are at same voltage as source is grounded we then have Vgs=Vds. Then the device will not be in saturation. But here it is mentioned as the device in saturation. Any one please help me that whether my statement is correct or not ??
@prannoyroy87534 жыл бұрын
if Vds=Vgs then obviously Vds>Vgs-Vth Substitute some values to understand this
@vijayakumarr35194 жыл бұрын
condition for saturation is Vds>Vgs-Vth not just Vds>Vgs. So if Vds=Vgs and if you minus one Vth from Vgs it will be always less than Vds so device will be always in saturation mode.
@Hariharan_KA Жыл бұрын
its not ' Vds should be always greater than Vgs by one threshold' its ' Vds should not be less than Vgs by one threshold '
@oskarjung67383 жыл бұрын
51:43 VSauce?😂
@electronics_enthusiast5 ай бұрын
Tf 😂
@hajiclub Жыл бұрын
We are adding degenerative resistor to the source that reduce the effect of variation in Id. But our signal which we are providing at the gate ass the small change, also acts as a variation in Id. So, would'nt this source resistor attenuates our information signal as well?
@AliGhafoor92 Жыл бұрын
It does attenuate. Thats why gain of Source degenerated CS amplifier is lower than that of non-degenerated one
@adityatripathi02 Жыл бұрын
The information signal that you are referring to is applied to the gate(VG). The drain current is sensitive to VGS(the difference between gate and source voltage) which does not change as much due to the degeneration resistor in the source. This is because VS(source voltage) goes up as VG(gate voltage/information signal) goes up, trying to maintain a relatively constant VGS.
@zinhaboussi Жыл бұрын
Id is depended on VGS wich is the difference between VG and VS not VG as value
@himanshupatra19918 жыл бұрын
At 58:20 while calculating Av(Vout/Vin).In Calculation of Vx/Vin why V1&V2 weren't taken into consideration ?
@ayshaabdulgani4427 жыл бұрын
you mean R1 and R2?
@MegaShaggy946 жыл бұрын
R1 & R2 are just used to set the value of Vin, since we're calculating Vout/Vin, since the value of Vin is already set, we don't take R1 & R2 into consideration
@anandsreekumar66873 жыл бұрын
In earlier class, R1 and R2 were considered to derive the "attenuation factor" of a real system where Rmic is present. In this example Rmic can be assumed to be 0. Thus applying to the attentuation factor (R1 || R2)/ ((R1 || R2) + Rmic), the (R1 || R2) cancel each other if there is no Rmic. Thus we can ignore effect of attenuation due to voltage divider bias in this example.
@Mouli-og2dk Жыл бұрын
yes it should be counted@@anandsreekumar6687
@anupammathur1710 ай бұрын
@@anandsreekumar6687thanks for explanation!
@DM1114-wd9rs7 ай бұрын
in self based cs stage how Vg equal to Vd when there is a resistor between. and why will no current flow through it
@sakshisingh41975 ай бұрын
Since no current no voltage drop so vg=vd and no current flows because there is a Capacitance between gate and substrate or you can say due to oxide layer which acts as insulator so no current flows