Video describes different ways to realize on-chip capacitors. like MiM, MoM,PiP, Mos Varactor etc.
Пікірлер: 46
@rajathmvenugopal83134 жыл бұрын
The practical examples which you take make the videos more engaging, thanks a ton for your hard work sir
@analoglayoutdesign23424 жыл бұрын
thanks for the feedback.
@vinaycrasta74593 жыл бұрын
Have watched couple of videos in this channel and got to learn a lot. Thank you Sir!!!
@yassinet.benchekroun5087 Жыл бұрын
Thank you very much for your efforts in making this. Very helpful!
@analoglayoutdesign2342 Жыл бұрын
Thanks for the feedback
@sivasankaransc33844 жыл бұрын
you are doing great work!. Thanks a lot!!!.
@someshprajapati44743 жыл бұрын
Nice explanation,in general vlsi design engineer should know all about this.
@張鈞堯-h4m4 жыл бұрын
Thank you very much!!! Always learn a lot.
@dallasjohnson60604 жыл бұрын
you are awesome! Its hard to find good videos on IC design. Keep it up!
@analoglayoutdesign23424 жыл бұрын
thanks for your feedback.
@kshitijsingh6363 жыл бұрын
Thanks for this informative video sir🙏Please make a video on Desity issues and need of custom fills (metal/base) from design perpective.Thanks
@koppulapeter8720 Жыл бұрын
Keep up the good work sir
@asha5034 жыл бұрын
Nicely explained 👌
@durgasubrahmanyam21382 жыл бұрын
way of explanation is good
@analoglayoutdesign23422 жыл бұрын
Ok thanks
@varshakamat7892 жыл бұрын
Hi Sir. Your explanations are really good. Thank you for the videos. Sir, I have the below question Can we use a combination of Poly and Metal caps for Decaps?
@analoglayoutdesign23422 жыл бұрын
Yes I think, if DRC permits.i think you are speaking about double poly, pip cap and then mom cap.. generally it's mos cap + mom cap...
@bhavanavalaboju60985 ай бұрын
Hi sir, thank you for the useful content. Consider APmom capacitor using 22nm fdsoi. a) I increased the oxide width from 1u to 1.033u, the cap remained same with 11 fingers (the device is automatically taking the number if fingers as 11). b) But when i increased the width to 1.034u, the cap increased and the number of fingers automatically increased to 12. Doubt: what changed during a) such that the cap value remained the same. Thanks a lot.
@analoglayoutdesign23425 ай бұрын
In case a, you only increased the width of insulator. Not the thickness. If you had increased the thickness of insulator, then cap would have decreased. But it’s a process thing and you can’t increase insulator thickness. Width of the insulator will not have effect on cap value. In case b, you changed the metal width, now cap has to change and it did. Hope this clarifies
@bhavanavalaboju60985 ай бұрын
@@analoglayoutdesign2342 Thank you for the response sir. But in a) as the width of the oxide increases, the area of the metal that holds the oxide in between also increases.(The number of fingers are 11 by default). This should increase the cap. In b) I did not increase the metal width, I just increased the width of oxide from 1.033u to 1.034u (which increased the number of fingers to 12 automatically). I do not understand what exactly happened with the cap when the width of the oxide is increased from 1.033u to 1.034u
@analoglayoutdesign23425 ай бұрын
So, the cap is fixed till number of fingers are same. That’s may be manufacturing accuracy. You may check the extracted netlist cap. May be that will change when you increase width of oxide without increasing the fingers
@bhavanavalaboju60985 ай бұрын
@@analoglayoutdesign2342 okay, thank you.
@anujshah49092 жыл бұрын
Can you please make a video on Decoupling capacitors? e.g how on-die and off-die capacitor will help?
@analoglayoutdesign23422 жыл бұрын
Yes sure.. will do that when I get time
@timegogo41822 жыл бұрын
Thank you Sir🙏
@meghachandargi68053 жыл бұрын
Thank you so much sir
@karthikmaheshrao60212 жыл бұрын
Voltage coefficient mainly depends on the form factor of the capacitors. Bigger the form factor better the voltage coefficient behaviour.
@analoglayoutdesign23422 жыл бұрын
Thanks for the additional information
@ANKITSINGH-md9ou3 жыл бұрын
Sir, at 6:43 ,, why how does, area decreases as capacitance increases,, ??? C is directly proportional to A from the equation.. so it should increase... correct me if I am wrong.
@analoglayoutdesign23423 жыл бұрын
When we decrease the area between the plates of capacitor, the density of capacitor increases...hence we can achieve same capacitance in lesser area..bcos capacitance is inversely proportional to distance between the plates
@anilkumarpattapu4309 Жыл бұрын
Which cap has more fabrication steps mim or mom?
@analoglayoutdesign2342 Жыл бұрын
MiM uses separate metal layer… MoM uses existing metal layers only
@anilkumarpattapu4309 Жыл бұрын
@@analoglayoutdesign2342 thanks yes i got this so as mom has more metal layers and inbetween oxide mom has more fabrication steps bcz mim has only one extra layer which is ctm
@sharathseshadri369810 ай бұрын
Can you explain antenna in MIM cap
@N.AJAYKUMAR4 жыл бұрын
hello sir, How mom and mim capacitances helps to the layout?
@analoglayoutdesign23424 жыл бұрын
will have a separate video on capacitor matching... this was basic theory of different types of capacitors..next we will look into matching.
@N.AJAYKUMAR4 жыл бұрын
@@analoglayoutdesign2342 Thank you
@shanejohns7901 Жыл бұрын
@3:01 "No real capacitor is loss less but an ideal one is and some real ones almost are."
@analoglayoutdesign2342 Жыл бұрын
Lossless, I meant , as compared to resistor.. of course there will be losses bcos of parasitic resistance… still it can be efficient
@satishvasamsetti23993 жыл бұрын
Small question .....why we will maintain minimum and maximum metal density ...plz answer me sir
@analoglayoutdesign23423 жыл бұрын
Density rules are to do with mechanical part of the IC design..
@satishvasamsetti23993 жыл бұрын
@@analoglayoutdesign2342 u mean cmp ?
@analoglayoutdesign23423 жыл бұрын
Cmp is a fabrication step...
@satishvasamsetti23993 жыл бұрын
@@analoglayoutdesign2342 mechanical part of ic means i didnt get that