Analog Layout & Design

Пікірлер

@abheekaryan3888 4 күн бұрын

good explanation 👍

@vimakuma 11 күн бұрын

I got rejected in interviews after learning this design of BGR.

@krishnasrinivasan7541 21 күн бұрын

Very nice tutorial! Thank you!

@maheshb406 25 күн бұрын

Sir which book you are referring to?

@pcbekri340 Ай бұрын

Thank you soooooooooooooo much, very well explained.

@prasanthkumarpalaparthi2954 Ай бұрын

please make a video on DFE

@sumitpande8294 Ай бұрын

I have a doubt. How Error amplifier can be used with positive feedback? As far as I know any amplifier works with negative feedback.

@RonaldRodriguez-e1h Ай бұрын

Lopez William Miller Anthony Lewis Eric

@mdwaliurrahmankhan4347 2 ай бұрын

Excellent teaching method with easy explanation. Thanks so much.

@analoglayoutdesign2342 Ай бұрын

Glad it was helpful!

@pankajsawaliya8062 2 ай бұрын

Excellent Explanation

@analoglayoutdesign2342 Ай бұрын

Glad it was helpful!

@vishwakumar8056 2 ай бұрын

Nice explanation. Can you please make a video on the EMIR Related topic( which net is prone to EM and IR)

@analoglayoutdesign2342 Ай бұрын

Sure will do

@vishwakumar8056 2 ай бұрын

Nice explanation. Can you please make a video on the EMIR Related topic( which net is prone to EM and IR)

@vishwakumar8056 2 ай бұрын

Nice explanation. Can you please make a video on the EMIR Related topic( which net is prone to EM and IR)

@DavidPerez-t4d 2 ай бұрын

Donnell Tunnel

@JasonChase-x7p 2 ай бұрын

Towne Common

@NostalgiaT 2 ай бұрын

What's the difference between Ctle and cfe?

@MarkHernandez-e4b 2 ай бұрын

Stark Ford

@wish_one_knot5006 2 ай бұрын

DE MoS For HV application Double diffusion MoS (n~ n+ Lateral Dmos ( n+ is placed in nwell ) Both are asymmetrical

@semmozhiulagam4086 2 ай бұрын

When I will get next video

@analoglayoutdesign2342 2 ай бұрын

Few more months required

@tanluu1944 3 ай бұрын

I appreciate your LDO explanation.

@analoglayoutdesign2342 3 ай бұрын

Glad to hear it!

@titouan6118 3 ай бұрын

At the center of the screen is represented a n channel depletion mosfet wired in the wrong way ! After some search over internet because I didn't understand your schema, I find out that what is really in place here, is a p channel enhancement mosfet. This makes much more sense, therefore I doubt that you really understand the fundamentals of electronics.

@analoglayoutdesign2342 3 ай бұрын

Today cmos designs are done with enhancement devices.. and ppl shout if they use depletion mode or native NMOS devices.. yes.. symbol is edited.. but also listen to what is being told over the video…. Here the discussion is not about device understanding or device physics..

@shreyasimodak6309 3 ай бұрын

Sir, thanks for the valuable content. Could you please share more on ESD? It would be really helpful for beginners.

@analoglayoutdesign2342 3 ай бұрын

Thanks for the feedback.. what other details are you expecting?

@amitkale211 3 ай бұрын

For turning on m2 that is pmos. Vgs should be less than vth right so how it could be turn on at 0.9

@kollasivaramakrishna6732 3 ай бұрын

good explanantion

@analoglayoutdesign2342 3 ай бұрын

Thanks

@anilkumarpattapu4309 4 ай бұрын

Only it provides constant ouput v or i respective of temperature variations? It is not if voltage supplay varies will not vontrol,

@analoglayoutdesign2342 4 ай бұрын

This architecture provides constant voltage and ptat current. Sub 1v architecture provides constant voltage and ztat current

@dasarinikhil14 4 ай бұрын

Hi Sir i have a dout like why the channel will send week signal to rx , as it's giving strong signal , is it due to capacitence or any other , please clarify this one by anyone

@analoglayoutdesign2342 4 ай бұрын

Yes it’s due to RC of the channel

@dasarinikhil14 4 ай бұрын

@@analoglayoutdesign2342 thanks sir

@dasarinikhil14 4 ай бұрын

@@analoglayoutdesign2342 help me with how we do placement and floorplan on What bases we will do it

@sreedevigiri723 4 ай бұрын

Exceellent explanation sir. Thank you

@analoglayoutdesign2342 4 ай бұрын

You are welcome

@eCiderr 4 ай бұрын

This is very well done! Thanks!

@analoglayoutdesign2342 4 ай бұрын

Thanks for the feedback

@sasa_agha_87 5 ай бұрын

Many thanks!

@analoglayoutdesign2342 5 ай бұрын

You're welcome!

@gopisureshchowdary 5 ай бұрын

Hi sir.Your videos are very helpful layout engineers. Can you please make videos on Antenna Effect Practicality?

@analoglayoutdesign2342 5 ай бұрын

Ok will try

@shivamgautam130 5 ай бұрын

Very informative Sir, Thank you

@analoglayoutdesign2342 5 ай бұрын

You are welcome

@offscreensingers7644 5 ай бұрын

Thanks for your clear explanation bro.❤❤

@analoglayoutdesign2342 5 ай бұрын

Thanks

@mahadesharya6975 5 ай бұрын

Excellent professor. Thanks a lot. I had watched ESD series on this channel long back

@analoglayoutdesign2342 5 ай бұрын

Thanks

@vijanvijan1936 6 ай бұрын

Mosfet capacitance video sir

@analoglayoutdesign2342 6 ай бұрын

Is it not covered?

@rohitshelkar7525 6 ай бұрын

your content is very good, could u please make some more videos on Serdes. Also, it would be helpful if you share the resources for study.

@analoglayoutdesign2342 6 ай бұрын

Ok will do.. need time

@bhavanavalaboju6098 6 ай бұрын

Hi sir, thank you for the useful content. Consider APmom capacitor using 22nm fdsoi. a) I increased the oxide width from 1u to 1.033u, the cap remained same with 11 fingers (the device is automatically taking the number if fingers as 11). b) But when i increased the width to 1.034u, the cap increased and the number of fingers automatically increased to 12. Doubt: what changed during a) such that the cap value remained the same. Thanks a lot.

@analoglayoutdesign2342 6 ай бұрын

In case a, you only increased the width of insulator. Not the thickness. If you had increased the thickness of insulator, then cap would have decreased. But it’s a process thing and you can’t increase insulator thickness. Width of the insulator will not have effect on cap value. In case b, you changed the metal width, now cap has to change and it did. Hope this clarifies

@bhavanavalaboju6098 6 ай бұрын

@@analoglayoutdesign2342 Thank you for the response sir. But in a) as the width of the oxide increases, the area of the metal that holds the oxide in between also increases.(The number of fingers are 11 by default). This should increase the cap. In b) I did not increase the metal width, I just increased the width of oxide from 1.033u to 1.034u (which increased the number of fingers to 12 automatically). I do not understand what exactly happened with the cap when the width of the oxide is increased from 1.033u to 1.034u

@analoglayoutdesign2342 6 ай бұрын

So, the cap is fixed till number of fingers are same. That’s may be manufacturing accuracy. You may check the extracted netlist cap. May be that will change when you increase width of oxide without increasing the fingers

@bhavanavalaboju6098 6 ай бұрын

@@analoglayoutdesign2342 okay, thank you.

@pallavisingh9973 6 ай бұрын

please also make video on how to simulate in cadence

@analoglayoutdesign2342 6 ай бұрын

I also want to do that actually

@pallavisingh9973 6 ай бұрын

Please make🙏

@pallavisingh9973 6 ай бұрын

which diode is choose in the cadence? please make some video on cadence please......its my request

@sigityuwono9902 6 ай бұрын

paused 16:00

@Ashish-gb4vg 6 ай бұрын

28:16

@arasha9047 7 ай бұрын

If you put pwell under box and n+, it cant be biased positive.

@ShivaKanugula 7 ай бұрын

Please do make a video on Antenna effect & STI/LOD

@analoglayoutdesign2342 7 ай бұрын

Will plan.. thanks for your suggestion

@piezero_567 7 ай бұрын

For ptat ckt. Generation are we taking beta of the bjt as infinite because only then base current is negligible....?

@analoglayoutdesign2342 7 ай бұрын

Here bjt used as diode.. it’s now variation of vbe as pn junction

@vimakuma 7 ай бұрын

Hi sir. @20:51 can not we just short 1v nodes of both cascode mirrors? Ultimately they will become same when we just connect them.

@analoglayoutdesign2342 7 ай бұрын

Please go thru.. we can’t do it that way

@vimakuma 7 ай бұрын

Could you please explain PLL sometime??

@analoglayoutdesign2342 7 ай бұрын

Ok will try with introduction video

@vishakhabhale4584 7 ай бұрын

very good lectures.....but sir one suggestion for you....please use good quality mic....your voice has air disturbance. may be you are talking very near to mic.

@analoglayoutdesign2342 7 ай бұрын

Noted

@srinidhi273 7 ай бұрын

It's wrong you have given positive feedback to error amplofier, it should be negative feedback.

@analoglayoutdesign2342 7 ай бұрын

Please go thru the video.. everything is explained.. no body will explain to you by coming down to such low level of basics

@vimakuma 7 ай бұрын

Whenever I get rejected in any interview and can't explain how the latch up works. I just come here and revise my basic 😭😭😭

@analoglayoutdesign2342 7 ай бұрын

Always be prepared.. if you understand the concept, no need to prepare again and again

@sailakshmi6278 7 ай бұрын

I think 3rd case was wrong only m1. Is on m2 is off bcz vgs less than vt in pmos vgs is 0.9 but vt is 0.6 m2 is off condition

@randomsstudioo 7 ай бұрын

great explanation

@analoglayoutdesign2342 7 ай бұрын

Thanks for the feedback

Ең жақсы KZbin

Пікірлер