DEEP N-WELL (DNW)

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Analog Layout & Design

Analog Layout & Design

Күн бұрын

Пікірлер: 39
@sisirmaity8356
@sisirmaity8356 4 жыл бұрын
I enjoy your teaching
@kavitareddy3349
@kavitareddy3349 3 жыл бұрын
Nice explanation sir ...pls add still more vedios related to io layout
@analoglayoutdesign2342
@analoglayoutdesign2342 3 жыл бұрын
Ok.thanks for feedback. Will do in sometime
@ritubhagat7860
@ritubhagat7860 4 жыл бұрын
good explanation, !st time i understand deep nwell so closely
@sanjayreddy9035
@sanjayreddy9035 5 жыл бұрын
Thanks for posting useful video
@varshakamat789
@varshakamat789 4 жыл бұрын
Very Nicely Explained. But in lower technologies like 65nm or 45nm, we don't have this bottom isolation I.e Deep N well.. We isolate a device only from side by adding rings and use ASUB layer to clear LVS.. How does this not pose a problem in device operation ?
@analoglayoutdesign2342
@analoglayoutdesign2342 4 жыл бұрын
There won't be any problem.. please watch agnd,dgnd,isolation video...I think I have explained this there
@analoglayoutdesign2342
@analoglayoutdesign2342 4 жыл бұрын
They may short agnd, dgnd at pad level.. they may do a star connection there
@98505177229850590818
@98505177229850590818 4 жыл бұрын
Excellent video
@arunbrvce
@arunbrvce 4 жыл бұрын
Hello sir. Good explanation. Just one question. What happens if I connect the bulk and source of the 2nd transistor together without deep nwell?
@analoglayoutdesign2342
@analoglayoutdesign2342 4 жыл бұрын
Any Nmos transistor without DNW, bulk is at ground. So whichever transistor you short bulk with source, even source will be at ground.
@vishalmanchanda4213
@vishalmanchanda4213 4 жыл бұрын
just to add a point, the fabrication cost increases for deep n-well significantly so it is used in a very critical stage.
@analoglayoutdesign2342
@analoglayoutdesign2342 4 жыл бұрын
DNW costs more..thats true.....one mask more....
@sushantsharma180
@sushantsharma180 4 жыл бұрын
sir can you please make a separate video on that .Why we powered deepnwell to vdd and why not to vss
@analoglayoutdesign2342
@analoglayoutdesign2342 4 жыл бұрын
ok sure
@rajasekharnallamekala4950
@rajasekharnallamekala4950 4 жыл бұрын
hi sushant , DNW is formed by a n well ring , the n well ring is connected to vdd so DNW is connected to vdd , the DEEP N WELL has the effect of decreasing the noise coupling through It to substrate and it isolates the nmos devices which can be at different potential from gnd.
@TheWizeRabbit
@TheWizeRabbit 3 жыл бұрын
if you connect, deepnwell to vss, it can act as a forward biased diode with substrate. (n-p connected to vss). We must always make sure that parasitic diodes are reverse biased for non conduction :)
@rajasekharnallamekala4950
@rajasekharnallamekala4950 4 жыл бұрын
To isolate local sub and global substrate (p), We use deep n- well . By using dnwell VT doesn't vary then there is no body effect . Finally dnwell is used to avoid body effect .
@analoglayoutdesign2342
@analoglayoutdesign2342 4 жыл бұрын
when you connect bulk to source then there would not be body effect. but DNW is not only used to overcome body effect. It will also provide isolation. Please watch video on AGND, DGND & ISOLATION.
@rajasekharnallamekala4950
@rajasekharnallamekala4950 4 жыл бұрын
@@analoglayoutdesign2342 ok sir
@kandrashilpasree114
@kandrashilpasree114 3 жыл бұрын
Hello sir I saw all videos of yours which is very connected to me and please try to upload all second order effects.
@analoglayoutdesign2342
@analoglayoutdesign2342 3 жыл бұрын
Sure..will do
@varshakamat789
@varshakamat789 4 жыл бұрын
Usually ,We connect Deep n well to highest potential ( say VDD =3 V) .. Is it possible to have a 5V PMOS device inside this Deep N well?
@analoglayoutdesign2342
@analoglayoutdesign2342 4 жыл бұрын
Nwell and DNW will be inherently shorted. Whatever voltage you connect to nwell will be shorted to DNW also. When you connect 3v to nwell and 5v to dnw, then you are essentially shorting 5v and 3v with little higher resistance that's all...
@narayanamurthig3315
@narayanamurthig3315 3 жыл бұрын
Sir is there any change of wpe and latchup by adding deep Nwell. Thanks sir.
@analoglayoutdesign2342
@analoglayoutdesign2342 3 жыл бұрын
There is one video on latchup with dnw...check that
@MALAYAPH24
@MALAYAPH24 2 жыл бұрын
Awesome
@neelimak3950
@neelimak3950 2 жыл бұрын
Why mostly p substrate is used as globally substrate
@analoglayoutdesign2342
@analoglayoutdesign2342 2 жыл бұрын
NMOS is faster transistor bcos of mobility. It needs psubstrate hence they use psub. Before cmos it was only NMOS transistors that were used.
@ManojKumar-jw5ys
@ManojKumar-jw5ys 4 жыл бұрын
thanks sir, but wt is mean by bulk?
@analoglayoutdesign2342
@analoglayoutdesign2342 4 жыл бұрын
bulk means p-substrate for nmos and nwell for pmos
@rajasekharnallamekala4950
@rajasekharnallamekala4950 3 жыл бұрын
in which situation DNW is connected to gnd? again in which situation DNW is connected to vdd ?
@analoglayoutdesign2342
@analoglayoutdesign2342 3 жыл бұрын
Dnw and n-well are shorted...so it should be connected to higher voltage...
@analoglayoutdesign2342
@analoglayoutdesign2342 3 жыл бұрын
Not to ground
@shwetakundgol6468
@shwetakundgol6468 5 жыл бұрын
Could you please post the videos on fabrication steps, WPE, LOD and body effect concepts.
@analoglayoutdesign2342
@analoglayoutdesign2342 5 жыл бұрын
Sure...every week I will upload one video... I will surely upload all these
@sharathseshadri3634
@sharathseshadri3634 8 ай бұрын
why can't we use p+ in DNW
@analoglayoutdesign2342
@analoglayoutdesign2342 8 ай бұрын
Why du you want to use?
@sharathseshadri3634
@sharathseshadri3634 7 ай бұрын
I want to know what happens
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